Regulating the crystal orientation of vapor-transport-deposited GeSe thin films by a post-annealing treatment.

Recently, GeSe has emerged as a highly promising photovoltaic absorber material due to its excellent optoelectronic properties, nontoxicity, and high stability. Although many advantages make GeSe well suited for thin-film solar cells, the power conversion efficiency of the GeSe thin-film solar cell is still much below the theoretical maximum efficiency. One of the challenges lies in controlling the crystal orientation of GeSe to enhance solar cell performance. The two-step preparation of GeSe thin films has not yet been reported to grow along the [111] orientation. In this work, we study the effect of a post-annealing treatment on the GeSe thin films and the performance of the solar cells. It was found that amorphous GeSe films can be converted into polycrystalline films with different orientations by changing the post-annealing temperature. [111]-oriented and [100]-oriented GeSe thin films were successfully prepared on the same substrate by optimizing the annealing conditions. With the structure of Au/GeSe/CdS/ITO cell devices, PCEs of 0.14% and 0.16% were ultimately achieved.

Emerging Trends in Electron Transport Layer Development for Stable and Efficient Perovskite Solar Cells.

Perovskite solar cells (PSCs) stand at the forefront of photovoltaic research, with current efficiencies surpassing 26.1%. This review critically examines the role of electron transport materials (ETMs) in enhancing the performance and longevity of PSCs. It presents an integrated overview of recent advancements in ETMs, like TiO2, ZnO, SnO2, fullerenes, non-fullerene polymers, and small molecules. Critical challenges are regulated grain structure, defect passivation techniques, energy level alignment, and interfacial engineering. Furthermore, the review highlights innovative materials that promise to redefine charge transport in PSCs. A detailed comparison of state-of-the-art ETMs elucidates their effectiveness in different perovskite systems. This review endeavors to inform the strategic enhancement and development of n-type electron transport layers (ETLs), delineating a pathway toward the realization of PSCs with superior efficiency and stability for potential commercial deployment.

Improvement of optical properties of InGaN-based red multiple quantum wells.

The realization of red-emitting InGaN quantum well (QW) is a hot issue in current nitride semiconductor research. It has been shown that using a low-Indium (In)-content pre-well layer is an effective method to improve the crystal quality of red QWs. On the other hand, keeping uniform composition distribution at higher In content in red QWs is an urgent problem to be solved. In this work, the optical properties of blue pre-QW and red QWs with different well width and growth conditions are investigated by photoluminescence (PL). The results prove that the higher-In-content blue pre-QW is beneficial to effectively relieve the residual stress. Meanwhile, higher growth temperature and growth rate can improve the uniformity of In content and the crystal quality of red QWs, enhancing the PL emission intensity. Possible physical process of stress evolution and the model of In fluctuation in the subsequent red QW are discussed. This study provides a useful reference for the development of InGaN-based red emission materials and devices.

Mosquito densovirus significantly reduces the vector susceptibility to dengue virus serotype 2 in Aedes albopictus mosquitoes (Diptera: Culicidae).

BACKGROUND: Dengue virus (DENV) is a major public health threat, with Aedes albopictus being the confirmed vector responsible for dengue epidemics in Guangzhou, China. Mosquito densoviruses (MDVs) are pathogenic mosquito-specific viruses, and a novel MDV was previously isolated from Ae. albopictus in Guangzhou. This study aims to determine the prevalence of MDVs in wild Ae. albopictus populations and investigate their potential interactions with DENV and impact on vector susceptibility for DENV. METHODS: The prevalence of MDV in wild mosquitoes in China was investigated using open access sequencing data and PCR detection in Ae. albopictus in Guangzhou. The viral infection rate and titers in MDV-persistent C6/36 cells were evaluated at 12, 24, 48, 72, 96, and 120 h post infection (hpi) by indirect immunofluorescence assay (IFA) and real time quantitative PCR (RT-qPCR). The midgut infection rate (MIR), dissemination rate (DR), and salivary gland infection rate (SGIR) in various tissues of MDV-infected mosquitoes were detected and quantified at 0, 5, 10, and 15 days post infection (dpi) by RT-PCR and RT-qPCR. The chi-square test evaluated dengue virus serotype 2 (DENV-2) and Aedes aegypti densovirus (AaeDV) infection rates and related indices in mosquitoes, while Tukey's LSD and t-tests compared viral titers in C6/36 cells and tissues over time. RESULTS: The results revealed a relatively wide distribution of MDVs in Aedes, Culex, and Anopheles mosquitoes in China and an over 68% positive rate. In vitro, significant reductions in DENV-2 titers in supernatant at 120 hpi, and an apparent decrease in DENV-2-positive cells at 96 and 120 hpi were observed. In vivo, DENV-2 in the ovaries and salivary glands was first detected at 10 dpi in both monoinfected and superinfected Ae. albopictus females, while MDV superinfection with DENV-2 suppressed the salivary gland infection rate at 15 dpi. DENV-2 titer in the ovary and salivary glands of Ae. albopictus was reduced in superinfected mosquitoes at 15 dpi. CONCLUSIONS: MDVs is widespread in natural mosquito populations, and replication of DENV-2 is suppressed in MDV-infected Ae. albopictus, thus reducing vector susceptibility to DENV-2. Our study supports the hypothesis that MDVs may contribute to reducing transmission of DENV and provides an alternative strategy for mosquito-transmitted disease control.

Effects of working pressure on the material and defect properties of Sb2S3 thin-film solar cells achieved by the VTD method.

Antimony sulfide (Sb2S3), an emerging material for photovoltaic devices, has drawn growing research interest due to its inexpensive and high-throughput device production. In this study, the material and defect properties of Sb2S3 thin films prepared by the vapor transport deposition (VTD) method at different working pressures were studied. Solar cells based on a structure of glass/ITO/CdS/Sb2S3/Au were fabricated. The working pressure showed a significant effect on the device's performance. The current density versus voltage measurement and scanning electron microscopy analysis outcome were utilized to investigate the photovoltaic and microstructural properties in the samples. The compositional analysis by energy dispersive X-ray spectroscopy measurement confirmed the Sb/S ratio as 2:2.8 for the thin films. The identification and characterization of the defects present in Sb2S3 thin films were performed via admittance measurements. Compared to the defect density, the defect energy level was found to inherit a more important role in the device's performance. The best solar cell performance with better crystal quality, lower defect density, and longer capture lifetime was achieved under the substrate working pressure of 2 Pa. The highest efficiency was found to be 0.86% with Voc=0.55V, Jsc=5.07mA/cm2.

Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells.

Electron tunneling dynamics in asymmetric coupled triple InGaN/GaN quantum wells (ACQWs) with different well thicknesses of 3.0 nm (QW1), 2.5 nm (QW2), and 2.0 nm (QW3) were quantitatively investigated based on the time- and spectrally-resolved photoluminescence (PL) measurements and the rate-equation theory. Under weak excitation, only the emission peak of the widest well was observed at room temperature due to the effective electron tunneling from a wide to a narrow well, while all three emission peaks of the distinct wells were obtained at a high excitation level. The PL-intensity ratios of the wells in the initial transient spectra differed from those in the time-integrated spectra. With a set of rate equations and the experimental results of PL ratios and decay times, a 2 ns tunneling time from QW2 to QW1 was extracted and was decreased to 0.5 ns with increasing excitation, while the one from QW3 to QW2 was extracted to be ∼170ps. The extracted tunneling times are in good qualitative agreement with the data from the exponential fitting of the PL decay traces, which can be interpreted by the energy mismatches between relevant energy levels in the ACQWs. These results provide not only a better understanding of the carrier recombination and tunneling processes in the ACQW systems but also a useful guidance for high-performance ACQW-based optoelectronic and functional devices.

Effects of working pressure and power on photovoltaic and defect properties of magnetron sputtered Sb2Se3 thin-film solar cells.

Antimony selenide (${\text{Sb}_2}{\text{Se}_3}$Sb2Se3) is an emerging material with potential applications in photovoltaics, while magnetron sputtering is an important method in material growth. In this study, ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 thin films, prepared by the magnetron sputtering technique with varied working pressures and sputtering powers, were fabricated into solar cells with a structure of $\text{glass}/\text{ITO}/\text{CdS}/{\text{Sb}_2}{\text{Se}_3}/\text{Au}$glass/ITO/CdS/Sb2Se3/Au. The current density versus voltage measurements and x-ray diffraction were introduced to compare the photovoltaic and structural properties of the cell samples. Characterization and identification of the defects in ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 thin films were investigated by admittance measurements. The ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 cell samples prepared with appropriate sputtering power (about 60 W) or working pressure (about 0.4 Pa) were found to own better crystal qualities and lower defect densities, which may be the reason for better efficiency.

Diagnosis of electrically active defects in CH3NH3PbI3 perovskite solar cells via admittance spectroscopy measurements.

The defect properties of CH3NH3PbI3 solar cells with efficiencies ranging from 7.70% to 12.51% were investigated using admittance spectroscopy measurements. Trap levels of the same kind with activation energies varied in the range of 0.16-0.23 eV above the valence band were found for different samples and identified as an interface-type defect. Moreover, the defect parameters, including the capture cross section of the holes, capture lifetime of the holes, and defect density, were extracted, and their relationships with the cell efficiencies were investigated. The results indicated that, compared with other parameters, defect density is a critical factor for CH3NH3PbI3 solar cell performance.

Effect of the Applied Fertilization Method under Full Straw Return on the Growth of Mechanically Transplanted Rice.

This study aimed to improve nitrogen utilization and alleviate the inhibition of straw decomposition during early tillering and the growth of paddy after straw return. Specifically, three different nitrogen fertilizer (base fertilizer) application methods were tested under full straw return: applying the compound fertilizer once (J1), applying the compound fertilizer twice (J3) and applying the ammonium carbonate fertilizer plus compound fertilizer (J2). Full straw return without fertilizer (CK1) and no straw return without fertilizer (CK2) were used as the controls. The results showed that treatment with ammonium carbonate fertilizer combined with compound fertilizer (J2) significantly enhanced straw decomposition, light interception and dry matter accumulation at an early stage of tillering, but reduced tiller occurrence at a late tillering stage. Grain yield was affected due to reduced dry matter accumulation, nitrogen use efficiency and number of effective panicles. There were no significant differences in rice growth, nitrogen use efficiency and grain yield between the one-time or two-time compound fertilizer application methods. In contrast, treatment with ammonium carbonate fertilizer combined with compound fertilizer (J2) under full straw return effectively improved straw decomposition and accelerated the return of green and tillering. In addition, the proportion of ammonium carbonate fertilizer affected the nutrient utilization efficiency and yield at later stages.

Giant reduction of the random lasing threshold in CH3NH3PbBr3 perovskite thin films by using a patterned sapphire substrate.

Hybrid organic-inorganic metal halide perovskites are currently arousing enthusiasm and stimulating huge activity across several fields of optoelectronics due to their outstanding properties. In this study, we present the incoherent random lasing (RL) emissions from CH3NH3PbBr3 perovskite thin films on both planar fluorine-doped tin oxide (FTO) substrates and patterned sapphire substrates (PSSs). A detailed examination of the spectral evolution indicates that inelastic exciton-exciton scattering called P-emission is the most plausible mechanism accounting for the lasing emissions. The RL threshold of the perovskite films on PSSs is found to be effectively reduced by more than one order of magnitude from 2.55 to 0.15 µJ per pulse compared to that on FTO substrates. The giant threshold reduction is ascribed to the enhanced random scattering of light and the photon recycling induced by the multireflection processes at the perovskite/PSS interface, which increases the likelihood that the inoperative random rays will re-enter the possible optical loops formed among the perovskite particles, resulting in considerable optical resonance enhancement. The simulation results reveal that the light extraction efficiency on the top facet of the perovskites is significantly increased by approximately 155% by utilizing the PSS instead of the FTO substrate. Moreover, the first direct experimental observation of the multireflection phenomenon of light, as well as the dynamic processes of photon propagation in the composite PSS structure, is presented by Kerr-gate-based time-resolved photoluminescence. Our results provide an effective strategy to achieve high-performance perovskite random lasers and novel light-emitting devices for speckle-free full-field imaging and solid-state lighting applications, by introducing ingeniously designed periodic nano-/microscale optical structures.

Effects of substrate temperature on material and photovoltaic properties of magnetron-sputtered Sb2Se3 thin films.

We studied the material and photovoltaic properties of Sb2Se3 thin films fabricated by a magnetron-sputtering method at different substrate temperatures. The films had good crystallinity at substrate temperatures over 300°C. The band-gap energies between 1.1 and 1.5 eV of the films, which were obtained by transmittance measurements, initially decreased and then increased slowly with increasing temperature. Solar cells based on the films with structures of ITO/CdS/Sb2Se3/Au were fabricated, and the substrate temperature had significant effects on the device performance. Low crystal quality at low temperature resulted in a low short-circuit current (Jsc), while high temperature caused Se deficiency due to evaporation, which decreased the open-circuit voltage (Voc). The best solar cell performance achieved an efficiency of 0.84% with a Voc of 0.27 V and Jsc of 9.47 mA/cm2 when the substrate temperature was 325°C.

Formation and dispersion of organometal halide perovskite nanocrystals in various solvents.

The solvent-induced precipitation in a mixture of good and poor solvents was often used to synthesize organometal halide perovskite nanocrystals (OMHP NCs). Here we investigate the formation of OMHP NCs by using HBr based precursors in various solvents. Various emission colors and morphologies of perovskite NCs were obtained depending on the solvents used. The nanoplatelets with blue emission were produced for the low polar solvents, such as toluene, PhCl and EtOAc. The increase in polarity of poor solvents results in the red shift of emission of obtained NCs. The much more polar solvents like acetone and CH3CN lead to formation of CH3NH3PbBr3 NCs (MaPbBr3) with cubic phase. The dispersion behaviors of MaPbBr3 NCs in different solvents was also investigated. MaPbBr3 NCs can exist stably in most unpolar solvents. However, they will be dissolved in polar solvents, like acetone and acetonitrile, to give rise to a clear solution with red emission of Pb2+. By injecting this clear solution to unpolar solvents, OMHP NCs can be reproduced.

Effect of Cu/Ga ratio on deep-level defects in CuGaSe2 thin films studied by photocapacitance measurements with two-wavelength excitation.

The effect of the Cu/Ga ratio on properties of deep-level defects in CuGaSe2 thin films were studied, using photocapacitance methods with two-wavelength excitation. The transient photocapacitance method, using a monochromatic probe light, determined two kinds of defects located at 0.8 eV and 1.5 eV above the valence band, respectively, the positions of which kept almost constant regardless of Cu/Ga ratio. In addition to the probe light, laser light with a wavelength of 1550 nm corresponding to 0.8 eV was then used to study the saturation effect of the deep-level defect at 0.8 eV above the valence band. The results suggest that the defect level at 0.8 eV acts as a recombination center at room temperature, and it becomes more effective in CuGaSe2 films with a lower Cu/Ga ratio.

Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells.

In this work, dynamics of carrier tunneling and recombination in InGaN-based asymmetric coupled multiple quantum wells (AC-MQWs) are systematically studied by excitation power-dependent and temperature-dependent photoluminescence (PL) measurements. With different pumping wavelengths of 405 and 325 nm, distinctly different PL spectral evolutions are observed, which could be well explained by the proposed anomalous carrier "reverse tunneling" based on the forbidden 1h→2e transitions in the AC-MQWs. The forbidden transitions are identified through the well agreement between the measured photo-modulated reflectance (PR) spectrum and the calculated interband transition energies. Our results indicate that, by ingeniously designing the MQW structure of the InGaN-based optoelectronic devices, it is possible to realize a specific interband optical transition which is even not allowed by the selection rule, and thereby effectively improve the carrier distribution across the QWs through the conventional and/or anomalous "reverse" carrier tunneling.

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections.

We investigated the gain-switching properties of GaN-based ridge-waveguide lasers on free-standing GaN substrates with low-cost nanosecond current injection. It was observed that the output pulses with intense injection consisted of an isolated short pulse with a duration of around 50 ps at the high-energy side and a long steady-state component at the lower energy side independent of the electric pulse duration. The energy separation between the short pulse and steady-state component can be over 30 meV, favoring short-pulse generation with the spectral filtering technique. The duration of the steady-state component can be tuned freely by controlling the duration and voltage of the electric pulse, which is very useful for generating pulse-width-tunable optical pulses for various applications.

Investigation of deep-level defects in CuGaSe2 thin-film solar cells using photocapacitance methods.

Properties of deep-level defects in CuGaSe2 thin-film solar cells were investigated using photocapacitance methods. By measuring the transient photocapacitance spectra, a deep-level defect centered at around 0.8 eV above the valence band and a defect band located around 1.54 eV above the valence band were determined. A configuration coordinate model was used to explain the thermal quenching effect of the two defects. By measuring the steady-state photocapacitance, a fast increase, followed by a slow increase, was observed in the photocapacitance transient when the sample was illuminated by light with a photon energy of 0.8 eV at low temperature. Upon re-exposure by sub-bandgap light, an extra slow decrease in photocapacitance transient was observed. These observations were interpreted using a configuration coordinate model assuming two states for the 0.8 eV defect: a stable state D and a metastable state D* with a large lattice relaxation. The variation of the photocapacitance transients was attributed to the different optical transition processes of carriers between the two states of the 0.8 eV defect and the valence and conduction bands.

Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles.

Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.

Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while this phenomenon disappeared at low excitation intensity. Under high excitation, about 40% emission enhancement at 160 K compared to that at low temperature, as well as a higher internal quantum efficiency (IQE) of 41.1%, was observed. A strong localization model is proposed to describe the possible processes of carrier transport, relaxation, and recombination. Using this model, the evolution of excitation-power-dependent emission intensity, shift of peak energy, and linewidth variation with elevating temperature is well explained. Finally, two-component decays of time-resolved PL (TRPL) with various excitation intensities are observed and analyzed with the biexponential model, which enables us to further understand the carrier relaxation dynamics in the InGaN QDs.

Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements.

World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I-V relations of individual subcells without the need for referencing measured I-V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the "balance sheets" of tandem solar cells.