A multifunctional optoelectronic device based on 2D material with wide bandgap.

Low-dimensional materials exhibit unique quantum confinement effects and morphologies as a result of their nanoscale size in one or more dimensions, making them exhibit distinctive physical properties compared to bulk counterparts. Among all low-dimensional materials, due to their atomic level thickness, two-dimensional materials possess extremely large shape anisotropy and consequently are speculated to have large optically anisotropic absorption. In this work, we demonstrate an optoelectronic device based on the combination of two-dimensional material and carbon dot with wide bandgap. High-efficient luminescence of carbon dot and extremely large shape anisotropy (>1500) of two-dimensional material with the wide bandgap of >4 eV cooperatively endow the optoelectronic device with multi-functions of optically anisotropic blue-light emission, visible light modulation, wavelength-dependent ultraviolet-light detection as well as blue fluorescent film assemble. This research opens new avenues for constructing multi-function-integrated optoelectronic devices via the combination of nanomaterials with different dimensions.

Improvement Strategies for Stability and Efficiency of Perovskite Solar Cells.

Recently, perovskites have garnered great attention owing to their outstanding characteristics, such as tunable bandgap, rapid absorption reaction, low cost and solution-based processing, leading to the development of high-quality and low-cost photovoltaic devices. However, the key challenges, such as stability, large-area processing, and toxicity, hinder the commercialization of perovskite solar cells (PSCs). In recent years, several studies have been carried out to overcome these issues and realize the commercialization of PSCs. Herein, the stability and photovoltaic efficiency improvement strategies of perovskite solar cells are briefly summarized from several directions, such as precursor doping, selection of hole/electron transport layer, tandem solar cell structure, and graphene-based PSCs. According to reference and analysis, we present our perspective on the future research directions and challenges of PSCs.

Synthetic Retinoid Kills Drug-Resistant Cancer Stem Cells via Inducing RARγ-Translocation-Mediated Tension Reduction and Chromatin Decondensation.

A recently developed synthetic retinoid abrogates proliferation and induces apoptosis of drug-resistant malignant-cancer-stem-cell-like cells. However, the underlying mechanisms of how the synthetic retinoid induces cancer-stem-cell-like cell tumor-repopulating cell (TRC) apoptosis are elusive. Here, it is shown that although the retinoid and conventional anticancer drugs cisplatin, all-trans retinoic acid, and tazarotene all inhibit cytoskeletal tension and decondense chromatin prior to inducing TRC apoptosis, half-maximal inhibitory concentration of the retinoid is 20-fold lower than those anticancer drugs. The synthetic retinoid induces retinoic acid receptor gamma (RARγ) translocation from the nucleus to the cytoplasm, leading to reduced RARγ binding to Cdc42 promoter and Cdc42 downregulation, which decreases filamentous-actin (F-actin) and inhibits cytoskeletal tension. Elevating F-actin or upregulating histone 3 lysine 9 trimethylation decreases retinoid-induced DNA damage and apoptosis of TRCs. The combinatorial treatment with a chromatin decondensation molecule and the retinoid inhibits tumor metastasis in mice more effectively than the synthetic retinoid alone. These findings suggest a strategy of lowering cell tension and decondensing chromatin to enhance DNA damage to abrogate metastasis of cancer-stem-cell-like cells with high efficacy.

Highly efficient blue quantum-dot light-emitting diodes based on a mixed composite of a carbazole donor and a triazine acceptor as the hole transport layer.

Solution-processed thermally activated delayed fluorescence (TADF) exciplexes were employed as the hole transport layer (HTL) of blue quantum dot (QD) light-emitting diodes (QLEDs) by blending polymer donors of poly(N-vinylcarbazole) (PVK) with small molecular acceptors of 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T). As a result, the PVK:T2T HTL can harvest holes and electrons leaking from the QD active layer to form exciplex excitons and then this harvested exciton energy can be effectively transferred to the adjacent QD emitters through the Förster resonance energy-transfer process. Furthermore, the TADF exciplexes can enhance the hole mobility of the HTL due to the charge transfer process from the PVK donor to the T2T acceptor under an external electric field. The maximum current efficiency (CE) and external quantum efficiency (EQE) of the fabricated blue ZnCdS/ZnS core/shell QLEDs increase from 4.14 cd A-1 and 7.33% for the PVK HTL to 7.73 cd A-1 and 13.66% for the PVK:(5 wt%)T2T HTL, respectively. Our results demonstrate that the TADF exciplex HTL would be a facile strategy to design high-performance blue QLEDs.

Correction: 'Stateful' threshold switching for neuromorphic learning.

Correction for ''Stateful' threshold switching for neuromorphic learning' by Zhijian Zhong et al., Nanoscale, 2022, DOI: 10.1039/d1nr05502j.

'Stateful' threshold switching for neuromorphic learning.

Memristors have promising prospects in developing neuromorphic chips that parallel the brain-level power efficiency and brain-like computational functions. However, the limited available ON/OFF states and high switching voltage in conventional resistive switching (RS) constrain its practical and flexible implementations to emulate biological synaptic functions with low power consumption. We present 'stateful' threshold switching (TS) within the millivoltage range depending on the resistive states of RS, which originates from the charging/discharging parasitic elements of a memristive circuit. Fundamental neuromorphic learning can be facilely implemented based on a single memristor by utilizing four resistive states in 'stateful' TS. Besides the metaplasticity of synaptic learning-forgetting behaviors, multifunctional associative learning, involving acquisition, extinction, recovery, generalization and protective inhibition, was realized with nonpolar operation and power consumption of 5.71 pW. The featured 'stateful' TS with flexible tunability, enriched states, and ultralow operating voltage will provide new directions toward a massive storage unit and bio-inspired neuromorphic system.

Facile Synthesis and Electrochemical Studies of Mn2O3/Graphene Composite as an Electrode Material for Supercapacitor Application.

A simplified sol-gel method that can be scaled up for large-scale production was adopted for the preparation of manganese oxide nanocrystals. Prepared Mn2O3 exhibited micron-sized particles with a nanoporous structure. In the present study, a simple and low-cost strategy has been employed to fabricate nanoporous Mn2O3 with an increased surface area for an electrode/electrolyte interface that improved the conduction of Mn2O3 material. The crystal phase and morphology of the prepared material was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The prepared electrode materials were deposited on a nickel foam substrate to investigate the electrochemical properties. The galvanostatic charge/discharge (GCD), cyclic voltammetry (CV), and complex impedance studies confirmed excellent specific capacitance and capacitive behavior of the prepared material. The synthesized Mn2O3/graphene composites exhibited an excellent specific capacitance of 391 F/g at a scan rate of 5 mV/S. Moreover, a specific capacitance of 369 F/g was recorded at a current density of 0.5 A/g using the galvanostatic charge/discharge test. The high porosity of the materials provided a better electrolyte-electrode interface with a larger specific area, thus suggesting its suitability for energy storage applications.

High-Performance MoO3 Nanoplate Electrode for Asymmetric Supercapacitor with Long-Term Electrochemical Stability.

In the present study, by controlling the content of ammonium molybdate via a facile hydrothermal method, we achieved MoO3 electrodes with different morphologies, i.e., triangular nanoplates, triangular prisms and four prisms. As the electrode material of supercapacitors, the MoO3 electrodes with triangular nanoplates show the highest specific capacitance (104 mAh g-1 at 2 mA cm-2) as well as a good cycling performance with 92.4% retention rate after 8000 cycles at 10 mA cm-2. Subsequently, an asymmetric supercapacitor is fabricated using the MoO3-0.15 and activated carbon (AC) as cathode and anode, respectively. The fabricated supercapacitor shows a high energy density of 24.8 Wh kg-1 at a power density of 358 W kg-1. Significantly, the device manifests a long-term cycling stability with retention rate of 103% even after 16000 cycles. According to the noted facts, the promising prospects of MoO3 electrode for practical applications in supercapacitor are definitely confirmed.

Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-VTe2 Grown by Molecular Beam Epitaxy.

Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained a rapid rise of interest for its physical nature and potential applications in oscillators and memory devices. Here, we report var der Waals epitaxial growth of centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 thin films showed sudden resistance change at temperatures of 240 and 135 K, corresponding to two CDW phase transitions driven by temperature. Moreover, the phase transitions can be driven by an electric field due to local Joule heating, and the corresponding resistance states are nonvolatile and controllable, which could be applied to the memory device where the logic states can be switched by an electric field. The multistage CDW phase transitions in the VTe2 thin films could be contributed to electron-phonon coupling in the two-dimensional VTe2, which is supported by twice pronounced Raman blue shifts of the vibration modes associated with in-plane phonons at CDW phase transition temperature. The results open up a new platform for understanding the microscopic physical essence and electrical control of CDW phases of TMDs, expanding the functionalities of these materials for memory applications.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 10(4) A W(-1)) and EQE value (up to 10(5)), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Significantly enhanced red photoluminescence properties of nanocomposite films composed of a ferroelectric Bi3.6Eu0.4Ti3O12 matrix and highly c-axis-oriented ZnO nanorods on Si substrates prepared by a hybrid chemical solution method.

We have developed a hybrid chemical solution method for preparing nanocomposite thin films composed of a ferroelectric Bi(3.6)Eu(0.4)Ti(3)O(12) (BEuT) matrix and highly c-axis-oriented ZnO nanorods on Si substrates. First, a seed-layer solution growth approach was used to prepare the highly c-axis-oriented ZnO nanorods, and then a chemical solution deposition method was employed to fabricate the BEuT matrix by coating the ZnO nanorods using a spin-coating technique. The nanocomposite thin films obtained exhibited significantly enhanced red photoluminescence (PL) properties. The PL enhancement can be attributed to very efficient radiation energy transfer from the ZnO nanorods to Eu(3+) ions in the BEuT matrix due to two spectral overlaps between the emission spectra of the ZnO nanorods and the excitation bands of Eu(3+) ions in the BEuT matrix: the spectral overlap between the sharp UV emission of ZnO centered at 380 nm and the excitation spectrum of the (7)F(0) --> (5)L(6) transition of Eu(3+) ions at 395 nm and that between the defect-related deep-level green emission band of ZnO centered at 525 nm and the excitation spectrum of the (7)F(0) --> (5)D(2) transition of Eu(3+) ions at 465 nm. Our study opens possibility of realizing highly efficient photoluminescent ferroelectric multifunctional integrated thin-film devices. In addition, the hybrid chemical solution method also provides a useful route for the synthesis of some new nanocomposite thin films consisting of other inorganic matrix and c-axis-oriented ZnO nanorods.

[Effects of absorption on photo-reduction of Cr (VI) by UV/TiO2 process and its elimination].

Reduction of Cr(VI) in aqueous solution were studied by the UV/TiO2 photo-reduction process. The results show that the photo-reduction of Cr(VI) ion by UV/TiQ2 agrees with Langmuir-Hinshelwood equation well. In absence of organic matters, absorption of TiO2 is the key step for this process, and optimal condition is pH = 1.5-2.5. The initial reduction rate correlate with pH value within pH = 1.5-10. The ability to competitively absorb to the surface of TiO2 can be ordered by PO4(3-) > SO4(2-) > Cl- > NO3-. Photoreduction rate and efficiency can be enhanced greatly with synergia of formaldehyde or formic acid, meanwhile synergia eliminate the effect of absorption. But synergic effects were reduced with phosphate.

Studies on characteristics of nanostructure of N-TiO2 thin films and photo-bactericidal action.

Pseudomonas aeruginosa strain (AS1.50) and Bacillus subtilis strain (AS1.439) from Ming lake were decomposed by photocatalytic nanostructure N-TiO(2) thin films in a photo-reactor under UV irradiation. The different thickness nanostructure N-TiO(2) thin films coated on mesh grid were prepared by sol-gel method and immobilized at 500 degrees C (films A) or 350 degrees C (films B) for 1 h in a muffle furnace. The results showed that N-TiO(2) thin film B (8.18 nm thickness, 2.760 nm height and 25.15 nm diameter) has more uniform granular nanostructure and thinner flat texture than N-TiO(2) thin film A (12.17 nm thickness, 3.578 nm height and 27.50 nm diameter). The bactericidal action of N-TiO(2) thin film A and film B for Pseudomonas aeruginosa strain (AS1.50) and Bacillus subtilis varniger strain (AS1.439) were investigated in this work. More than 95% of photocatalytic bactericidal efficiency for Pseudomonas aeruginosa strain (AS1.50) and 75% for Bacillus subtilis strain (AS1.439) were achieved by using N-TiO(2) thin films-B for 70-80 min of irradiation during the photo-bactericidal experimental process. The results indicated that the photo-induced bactericidal efficiency of N-TiO(2) thin films probably depended on the characteristics of the films.