RESUMO
Epitaxial VO2/TiO2 thin film heterostructures were grown on (100) (m-cut) Al2O3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO2 to â¼44 °C while retaining a 4 order of magnitude SMT using the TiO2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO2/TiO2/Al2O3 heterostructures as a function of TiO2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO2 buffer films is responsible for the partially strained VO2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.
RESUMO
We report room-temperature negative magnetoresistance in ferromagnet-graphene-ferromagnet (FM|Gr|FM) junctions with minority spin polarization exceeding 80%, consistent with predictions of strong minority spin filtering. We fabricated arrays of such junctions via chemical vapor deposition of multilayer graphene on lattice-matched single-crystal NiFe(111) films and standard photolithographic patterning and etching techniques. The junctions exhibit metallic transport behavior, low resistance, and the negative magnetoresistance characteristic of a minority spin filter interface throughout the temperature range 10 to 300 K. We develop a device model to incorporate the predicted spin filtering by explicitly treating a metallic minority spin channel with spin current conversion and a tunnel barrier majority spin channel and extract spin polarization of at least 80% in the graphene layer in our structures. The junctions also show antiferromagnetic coupling, consistent with several recent predictions. The methods and findings are relevant to fast-readout low-power magnetic random access memory technology, spin logic devices, and low-power magnetic field sensors.
RESUMO
We have characterized the terahertz (THz) vibrational spectroscopy of organic polycrystalline thin films using the new experimental technique of waveguide terahertz time domain spectroscopy (waveguide THz-TDS). The organic materials used in this study are tetracyanoquinodimethane (TCNQ) and 1,3-dicyanobenzene (13DCB). For each material, a thin film is cast onto one of the inner surfaces of a metal parallel plate waveguide (PPWG), followed by measurement of the low-frequency vibrational spectrum using waveguide THz-TDS. The vibrational spectra of the waveguide films are compared to corresponding vibrational spectra of standard pellet samples made by dispersing the organic solid in transparent polyethylene. We show how the waveguide films produce significantly narrower THz vibrational line shapes and reveal additional spectral lines that are obscured by inhomogeneous broadening effects in the pellet samples. When TCNQ waveguide films are cooled to 77 K, vibrational line widths as sharp as 25-30 gigahertz (0.83-1.0 cm(-1)) at the full width at half-maximum are observed, which are among the narrowest far-infrared line widths measured for this material. The origin of the line-narrowing effect for the waveguide films is the suppression of inhomogeneous broadening due to the planar ordering of the film on the waveguide surface. The TCNQ waveguide films are further characterized using optical microscopic evaluation to understand how film morphology affects the THz vibrational spectrum. X-ray diffraction is used to determine the orientation of the polycrystalline TCNQ films on the PPWG surface and to qualitatively explain the different vibrational line strengths observed for the ordered waveguide film relative to the random pellet.