RESUMO
Oxygen vacancy is the most studied point defect and has been found to significantly influence the physical properties of zinc oxide (ZnO). By using atomic force microscopy (AFM), we show that the frictional properties on the ZnO surface at the nanoscale greatly depend on the amount of oxygen vacancies present in the surface layer and the ambient humidity. The photocatalytic effect (PCE) is used to qualitatively control the amount of oxygen vacancies in the surface layer of ZnO and reversibly switch the surface wettability between hydrophobic and superhydrophilic states. Because oxygen vacancies in the ZnO surface can attract ambient water molecules, during the AFM friction measurement, water meniscus can form between the asperities at the AFM tip-ZnO contact due to the capillary condensation, leading to negative dependence of friction on the logarithm of tip sliding velocity. Such dependence is found to be a strong function of relative humidity and can be reversibly manipulated by the PCE. Our results indicate that it is possible to control the frictional properties of ZnO surface at the nanoscale using optical approaches.
RESUMO
We here report a simple and efficient method to grow single-layer bismuth nanoparticles (BiNPs) with various sizes on glass substrates. Optimal conditions were found to be 200°C and 0.12 W/cm(2) at a growth rate of 6 Å/s, with the deposition time around 40 s. Scanning electron microscope (SEM) images were used to calculate the particle size distribution statistics, and high-resolution X-ray diffraction (XRD) patterns were used to examine the chemical interactions between BiNPs and the substrates. By measuring the transmission spectra within the range of 300 to 1,000 nm, we found that the optical bandgap can be modulated from 0.45 to 2.63 eV by controlling the size of these BiNPs. These interesting discoveries offer an insight to explore the dynamic nature of nanoparticles.
RESUMO
This study investigates a simple method for thickness estimation with single layer accuracy for self-assembling opal crystals prepared by the dip-coating method. The thickness (number of layers) of the opal crystals was estimated by an analysis of the optical reflectance from s-polarization incident light, and then verified with SEM. The opal crystals were considered as periodic dielectric layers and were analyzed with the transfer matrix method. The reflectance simulation showed a good agreement with the experimental results. The lattice constant and the thickness were determined at the peak position and by the fringes of the reflection spectra, respectively.
RESUMO
A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be approximately 2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.
