Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices.

Effects of surface passivation on twin-free GaAs nanosheets.

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

GaAs nanowire array solar cells with axial p-i-n junctions.

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures.

Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) are demonstrated. In contrast to GaAs nanowires grown by (SAG) in which rotational twins and stacking faults are almost universally observed, twin formation is either suppressed or eliminated within properly oriented nanosheets are grown under a range of growth conditions. A morphology transition in the nanosheets due to twinning results in surface energy reduction, which may also explain the high twin-defect density that occurs within some III­V semiconductor nanostructures, such as GaAs nanowires. Calculations suggest that the surface energy is significantly reduced by the formation of {111}-plane bounded tetrahedra after the morphology transition of nanowire structures. By contrast, owing to the formation of two vertical {11[overline]0} planes which comprise the majority of the total surface energy of nanosheet structures, the energy reduction effect due to the morphology transition is not as dramatic as that for nanowire structures. Furthermore, the surface energy reduction effect is mitigated in longer nanosheets which, in turn, suppresses twinning.

Electrical and optical characterization of surface passivation in GaAs nanowires.

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility µ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

Non-degenerate fs pump-probe study on InGaN with multi-wavelength second-harmonic generation.

Non-degenerate fs pump-probe experiments in the UV-visible range for ultrafast carrier dynamics study of InGaN with adjustable pump and probe photon energies are implemented with simultaneously multiwavelength second-harmonic generation (SHG) of a 10 fs Ti:sapphire laser. The multi-wavelength SHG is realized with two beta-barium borate crystals of different cutting angles. The full-widths at half-maximum of the SHG pulses are around 150 fs, which are obtained from the cross-correlation measurement with a reverse-biased 280-nm light-emitting diode as the twophoton absorption photo-detector. Such pulses are used to perform nondegenerate pump-probe experiments on an InGaN thin film, in which indium-rich nano-clusters and compositional fluctuations have been identified. Relaxation of carriers from the pump level to the probe one through the scattering-induced local thermalization (<1 ps) and then the carrier-transport-dominating global thermalization (in several ps) processes is observed.