Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate.

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

Harnessing of Spatially Confined Perovskite Nanocrystals Using Polysaccharide-based Block Copolymer Systems.

Metal halide perovskite nanocrystals (PVSK NCs) are generally unstable upon their transfer from colloidal dispersions to thin film devices. This has been a major obstacle limiting their widespread application. In this study, we proposed a new approach to maintain their exceptional optoelectronic properties during this transfer by dispersing brightly emitting cesium lead halide PVSK NCs in polysaccharide-based maltoheptaose-block-polyisoprene-block-maltoheptaose (MH-b-PI-b-MH) triblock copolymer (BCP) matrices. Instantaneous crystallization of ion precursors with favorable coordination to the sugar (maltoheptaose) domains produced ordered NCs with varied nanostructures of controlled domain size (≈10-20 nm). Confining highly ordered and low dimension PVSK NCs in polysaccharide-based BCPs constituted a powerful tool to control the self-assembly of BCPs and PVSK NCs into predictable structures. Consequently, the hybrid thin films exhibited excellent durability to humidity and stretchability with a relatively high PL intensity and photoluminescence quantum yield (>70%). Furthermore, stretchable phototransistor memory devices were produced and maintained with a good memory ratio of 105 and exhibited a long-term memory retention over 104 s at a high strain of 100%.

Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod-Coil Molecules as a Floating Gate.

With the explosive growth in data generation, photomemory capable of multibit data storage is highly desired to enhance the capacity of storage media. To improve the performance of phototransistor memory, an organic-molecule-based electret with an elaborate nanostructure is of great importance because it can enable multibit data storage in a memory device with high stability. In this study, a series of star-shaped rod-coil molecules consisting of perylenediimide (PDI) and biobased solanesol were synthesized in two-armed (PDI-Sol2), four-armed (PDI-Sol4), and six-armed (PDI-Sol6) architectures. Their molecular architecture-morphology relationships were investigated, and phototransistor memory was fabricated and characterized to evaluate the structure-performance relationship of these rod-coil molecules. Accordingly, the memory devices were enabled by photowriting with panchromatic light (405-650 nm) and electrical erasing using a gate bias. The PDI-Sol4-based memory device showed high memory ratios of 10 000 over 10 000 s and a rapid multilevel photoresponse of 50 ms. This achievement is related to the favorable energy-level alignment, isolated nanostructure, and face-on orientation of PDI-Sol4, which eliminated the charge tunneling barrier. The results of this study provide a new strategy for tailoring nanostructures in organic-molecule-based electrets by using a star-shaped rod-coil architecture for high-performance phototransistor memory.

Association Between Subconjunctival Hemorrhage and Acute Coronary Syndrome: A 14-Year Nationwide Population-Based Cohort Study.

Purpose: Subconjunctival hemorrhage (SCH) is usually a benign ocular disorder that causes painless, redness under the conjunctiva. However, since SCH and acute coronary syndrome (ACS) share many vascular risk factors, studies have suggested that these two disorders may be significantly associated with each other, and evaluate the concomitance of ACS in patients with SCH. Methods: This population-based cohort study, enrolled 35,260 Taiwanese patients, and used the Taiwan National Health Insurance Research Database to identify patients with ACS and SCH. Outcomes were compared between the with and without SCH groups. The study population was followed until the date of ACS onset, the date of withdrawal, death, or December 31st 2013, whichever came first. Results: Of the 85,925 patients identified with SCH between 1996 and 2013, 68,295 were excluded based on the study's exclusion criteria, and a total of 17,630 patients with SCH who were diagnosed by ophthalmologists between 2000 and 2012 were eligible for analysis. After 1:1 propensity score matching for 5-year age groups, gender, and the index year, the results showed that SCH was more common in the 40-59 age group (53.82%) and females (58.66%). As for the ACS-related risk factors, patients with diabetes mellitus (aHR = 1.58, 95% CI = [1.38, 1.81]), hypertension (aHR = 1.71, 95% CI = [1.49, 1.96]) and patients taking aspirin (aHR = 1.67, 95% CI = [1.47, 1.90]) had a notably higher risk of ACS. However, it was found that there were no significant differences in the occurrence of ACS between the non-SCH and SCH patients. Conclusion: This results of this study regarding the risk factors and epidemiology of SCH and ACS were in keeping with previously reported findings. However, the results revealed no significant association between SCH and ACS.

Conception of a Smart Artificial Retina Based on a Dual-Mode Organic Sensing Inverter.

The human visual system enables perceiving, learning, remembering, and recognizing elementary visual information (light, colors, and images), which has inspired the development of biomimicry visual system-based electronic devices. Photosensing and synaptic devices are integrated into these systems to realize elementary information storage and recognition to imitate image processing. However, the severe restrictions of the monotonic light response and complicated circuitry design remain challenges for the development of artificial visual devices. Here, the concept of a smart artificial retina based on an organic optical sensing inverter device that can be operated as a multiwavelength photodetector and recorder is reported first. The device exhibits a light-triggered broadband (red/green/blue) response, a low energy consumption as low as ±5 V, and an ultrafast response speed (<300 ms). Moreover, the multifunctional component is also combined within a single cell for health monitoring of the artificial retina during light surveillance to avoid retinopathy. Proof-of-concept devices, by simplifying the circuitry and providing dual-mode functions, can contribute significantly to the development of bionics design and broaden the horizon for smart artificial retinas in the human visual system.

Stretchable OFET Memories: Tuning the Morphology and the Charge-Trapping Ability of Conjugated Block Copolymers through Soft Segment Branching.

The mechanical properties and structural design flexibility of charge-trapping polymer electrets have led to their widespread use in organic field-effect transistor (OFET) memories. For example, in the electrets of polyfluorene-based conjugated/insulating block copolymers (BCPs), the confined fiberlike polyfluorene nanostructures in the insulating polymer matrix act as effective hole-trapping sites, leading to controllable memory performance through the design of BCPs. However, few studies have reported intrinsically stretchable charge-trapping materials and their memory device applications, and a practical method to correlate the thin-film morphology of BCP electrets with their charge-trapping ability has not yet been developed. In this study, a series of new conjugated/insulating BCPs, poly(9,9-di-n-hexyl-2,7-fluorene)-block-poly(δ-decanolactone)s (PF-b-PDLx, x = 1-3), as stretchable hole-trapping materials are reported. The linear and branched PDL blocks with comparable molecular weights were used to investigate the effect of polymer architecture on morphology and device performance. Moreover, the coverage area of the polyfluorene nanofibers on the BCP films was extracted from atomic force microscopy images, which can be correlated with the trapping density of the polymer electrets. The branched PDL segments not only improve stretchability but also tailor crystallinity and phase separation of the BCPs, thus increasing their charge-trapping ability. The OFET memory device with PF-b-PDL3 as the electret layer exhibited the largest memory window (102 V) and could retain its performance at up to 100% strain. This research highlights the importance of the BCP design for developing stretchable charge-trapping materials.

Syndecan-3 contributes to the regulation of the microenvironment at the node of Ranvier following end-to­side neurorrhaphy: sodium image analysis.

Syndecan-3 (SDC3) and Syndecan-4 (SDC4) are distributed throughout the nervous system (NS) and are favourable factors in motor neuron development. They are also essential for regulation of neurite outgrowth in the CNS. However, their roles in the reconstruction of the nodes of Ranvier after peripheral nerve injury (PNI) are still unclear. Present study used an in vivo model of end-to-side neurorrhaphy (ESN) for 1-3 months. The recovery of neuromuscular function was evaluated by grooming test. Expression and co-localization of SDC3, SDC4, and Nav1.6 channel (Nav1.6) at regenerating axons were detected by proximity ligation assay and confocal microscopy after ESN. Time-of-flight secondary ion mass spectrometry was used for imaging ions distribution on tissue. Our data showed that the re-clustering of sodium and Nav1.6 at nodal regions of the regenerating nerve corresponded to the distribution of SDC3 after ESN. Furthermore, the re-establishment of sodium and Nav1.6 correlated with the recovery of muscle power 3 months after ESN. This study suggested syndecans may involve in stabilizing Nav1.6 and further modulate the distribution of sodium at nodal regions after remyelination. The efficiency of sodium re-clustering was improved by the assistance of anionic syndecan, resulting in a better functional repair of PNI.

Backbone Engineering of Diketopyrrolopyrrole-Based Conjugated Polymers through Random Terpolymerization for Improved Mobility-Stretchability Property.

Conjugated polymers synthesized through random terpolymerization have recently attracted great research interest due to the synergetic effect on the polymer's crystallinity and semiconducting properties. Several studies have demonstrated the efficacy of random terpolymerization in fine-tuning the aggregation behavior and optoelectronic property of conjugated polymers to yield enhanced device performance. However, as an influential approach of backbone engineering, its efficacy in modulating the mobility-stretchability property of high-performance conjugated polymers has not been fuller explored to date. Herein, a series of random terpolymers based on the diketopyrrolopyrrole-bithiophene (DPP-2T) backbone incorporating different amounts of isoindigo (IID) unit are synthesized, and their structure-mobility-stretchability correlation is thoroughly investigated. Our results reveal that random terpolymers containing a low IID content (DPP95 and DPP90) show enhanced interchain packing and solid-state aggregation to result in improved charge-transporting performance (can reach 4 order higher) compared to the parent polymer DPP100. In addition, owing to the enriched amorphous feature, DPP95 and DPP90 deliver an improved orthogonal mobility (µh) of >0.01 cm2 V-1 s-1 under a 100% strain, higher than the value (∼0.002 cm2 V-1 s-1) of DPP100. Moreover, DPP95 even yields 20% enhanced orthogonal µh retention after 800 stretching-releasing cycles with 60% strain. As concluded from a series of analyses, the improved mobility-stretchability property exerted by random terpolymerization arises from the enriched amorphous feature and enhanced aggregation behavior imposed by the geometry mismatch between different acceptors (DPP and IID). This study demonstrates that backbone engineering through rational random terpolymerization not only enhances the mobility-stretchability of a conjugated polymer but also realizes a better mechanical endurance, providing a new perspective for the design of high-performance stretchable conjugated polymers.

High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate.

A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.

Two-Dimensional Cs2Pb(SCN)2Br2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior.

The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs2Pb(SCN)2Br2/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >106 over 104 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs2Pb(SCN)2Br2/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 103. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.

Study on Intrinsic Stretchability of Diketopyrrolopyrrole-Based π-Conjugated Copolymers with Poly(acryl amide) Side Chains for Organic Field-Effect Transistors.

The development of a π-conjugated polymer with hydrogen-bonding moieties has aroused great attention because of the improved molecular stacking and the hydrogen-bonding network. In this study, PDPPTVT (diketopyrrolopyrrole-thiophenevinylenethiophene) and PDPPSe (diketopyrrolopyrrole-selenophene) alkylated with a carbosilane (SiC8) side chain and poly(acryl amide) (PAM)-incorporated alkyl side chain were prepared, and their structure-performance and structure-stretchability correlation were evaluated. By incorporating the DPPTVT backbone and 0, 5, 10, or 20% PAM-incorporated alkyl side chain, the µh value could reach 2.0, 0.97, 0.74, and 0.42 cm2 V-1 s-1, respectively (P1 to P4). The polymer with the PDPPSe backbone and 5% PAM-incorporated alkyl side-chain (P5) exhibited the maximum µh value of 0.96 cm2 V-1 s-1. By extending the PAM moiety from the backbone with alkyl spacers, the solid-state packing and edge-on orientation can be properly maintained. Surprisingly, the PAM-incorporated alkyl side-chain can provide a hydrogen-bonding network serving as sacrificial bonding to mechanical deformation. Therefore, the relevant changes in the crystallographic parameters including the crystalline size and the in-plane π-π stacking distance with a 100% external strain were less than 4 and 0.8%, respectively, from P1 to P3. Therefore, P3 achieved an excellent stretchability while maintaining its molecular orientation and charge-transporting performance. Even with 100% external strain, P3 still provided an orthogonal µh over 0.1 cm2 V-1 s-1. Moreover, by substituting the TVT moiety with the Se moiety, the ductility of the backbone can be further increased when the elastic modulus decreases from 0.80 to 0.36 GPa for P2 to P5. The achieved high µh retention is over 20% after 500 stretching-releasing cycles with a 60% external strain perpendicular to the channel direction for the polymer composed of PDPPSe and 5% PAM content. The results manifest that our newly designed DPP with the PAM-incorporated alkyl side chain provides a promising approach to promote the intrinsic stretchability of the π-conjugated polymers.

Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate-block-Polystyrene with Different Molecular Weights via Solvent Annealing.

We report the resistive electrical memory characteristics controlled by the self-assembled nanostructures of maltoheptaose-block-polystyrene (MH-b-PS) block copolymers, where the MH and PS blocks provide the charge-trapping and the insulating tunneling layer, respectively. A simple solvent annealing process, with various annealing conditions, were introduced for MH-b-PS thin films to achieve disordered, orientated cylinders and ordered-packed spheres morphologies. More details about the self-assembled MH-b-PS nanostructures, coupled with different volume fractions between MH and PS blocks, were investigated using atomic force microscopy and grazing-incidence small-angle X-ray scattering analyses. Moreover, various electrical memory behaviors including nonvolatile write-once-read-many-times (WORM) and Flash, and volatile dynamic-random-access-memory (DRAM) could be obtained by the same material (MH-b-PS3k). This study establishes a detailed relationship between the nanostructure of the MH-b-PS-based block copolymers and their memory behavior of the resistive memory devices.

Multilevel Photonic Transistor Memory Devices Using Conjugated/Insulated Polymer Blend Electrets.

Photonic data storage has diverse optoelectronic applications such as optical sensing and recording, integrated image circuits, and multibit-storage flash memory. In this study, we employ conjugated/insulated polymer blends as the charge storage electret for photonic field-effect transistor memory devices by exploring the blend composition, energy level alignment, and morphology on the memory characteristics. The studied conjugated polymers included poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PF), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[{2,5-di(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene}-co-{3-(4'-(3″,7″-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}-co-{3-(3'-(3',7'-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}] (SY-PPV), and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), and the insulated polymers were polystyrene (PS) and poly(methyl methacrylate) (PMMA). The photonic memory device using the PF/PS blend electret exhibited a dynamic switching behavior with light-writing and voltage-erasing processes both within only 1 s, along with a high contrast on the current on/off ratio between "Photo-On" and "Electrical-OFF" over 106 and the decent retention time for more than 3 months. In addition, the multilevel memory behavior could be observed using different light sources of 405, 450, and 520 nm or energy intensity, which was supported by surface potential analysis. The characteristics were superior to those of the devices using PF/PMMA blend due to the higher charge storage behavior of PS supported by fluorescence analysis. The PF/PS blend film prepared from the chlorobenzene solvent exhibited mesh-like and aggregated PF domains in the PS matrix and enhanced the contact surface area between the semiconductor and blend electret, leading to a higher memory window. The photonic memory behavior was also observed in the blend electrets of PS with the low band gap polymer, MEH-PPV, SY-PPV, or F8BT, by changing the photoresponsive light sources. Our study demonstrated a new electret system to apply on the multilevel photonic memory devices.

Asymmetric Side-Chain Engineering of Isoindigo-Based Polymers for Improved Stretchability and Applications in Field-Effect Transistors.

Thus far, there is still no study systematically investigating the influence of asymmetric side-chain design on a polymer's stretchability and its associated stretchable device applications. Herein, three kinds of asymmetric side chains consisting of carbosilane side chain (Si-C8), siloxane-terminated side chain (SiO-C8), and decyltetradecane side chain (DT) are engineered in isoindigo-bithiophene (PII2T, P1-P3) and isoindigo-difluorobithiophene (PII2TF, P4-P6) conjugated polymers, and their structure-stretchability correlation is explored in field-effect transistor characterization. It is revealed that owing to the geometric difference between the side chains, different asymmetric side-chain combinations impose distinct influences on the molecular stacking and orientation of the derived polymers. Surprisingly, the combination of asymmetric side chains and backbone fluorination is shown to deliver the best stretchability and mechanical durability of the derived polymer. Consequently, P6 consisting of asymmetric Si-C8/DT side chains and fluorinated backbone possesses the best mobility preservation of 81% at 100% strain with the stretching force perpendicular to the charge-transporting direction. Moreover, it presents 90% mobility retention after 400 stretching-releasing cycles with 60% strain, greatly exceeding the value (36%) of the non-fluorinated counterpart (P3). Our results suggest that the rational design of asymmetric side chains and backbone fluorination provides an efficient way to enhance the intrinsic stretchability of conjugated polymers.