Measurements of variable capacitance using single port radio frequency reflectometry.

A radio frequency (RF) reflectometry technique is presented to measure device capacitances using a probe station. This technique is used to characterize micro-electromechanical system (MEMS) variable capacitor devices that can be connected to create pull-up and pull-down networks used in digital gates for reversible computing. Adiabatic reversible computing is a promising approach to energy-efficient computing that can dramatically reduce heat dissipation by switching circuits at speeds below their RC time constants, introducing a trade-off between energy and speed. The variable capacitors in this study will be measured using single port RF reflectometry achieved with a custom-made RF probe. The RF probe consists of a micromanipulator with an on-board matching network and is calibrated by measuring a capacitive bank that shows a clearly visible frequency shift with the increase in capacitance. The RF probe worked well when measuring static capacitors with no parasitic resistance; however, the frequency shift is masked when measuring the MEMS variable capacitors due to their high in-series parasitic resistance (around 80 kΩ). Therefore, RF reflectometry has the potential to measure MEMS variable capacitors in the range of 0-30 fF when not masked by a high in-series parasitic resistance, creating a fast and versatile method for characterizing variable capacitors that can be used in energy-efficient computing.

Gate reflectometry of single-electron box arrays using calibrated low temperature matching networks.

Sensitive dispersive readouts of single-electron devices ("gate reflectometry") rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an impedance transformer to match the impedance of the load to the characteristic impedance of the transmission line and thus obtain the best sensitivity and signal-to-noise ratio. This is particularly important for measuring large impedances, typical for dispersive readouts of single-electron devices because even a small mismatch will cause a strong signal degradation. When performing RF measurements, a calibration and error correction of the measurement apparatus must be performed in order to remove errors caused by unavoidable non-idealities of the measurement system. Lack of calibration makes optimizing a matching network difficult and ambiguous, and it also prevents a direct quantitative comparison between measurements taken of different devices or on different systems. We propose and demonstrate a simple straightforward method to design and optimize a pi matching network for readouts of devices with large impedance, [Formula: see text]. It is based on a single low temperature calibrated measurement of an unadjusted network composed of a single L-section followed by a simple calculation to determine a value of the "balancing" capacitor needed to achieve matching conditions for a pi network. We demonstrate that the proposed calibration/error correction technique can be directly applied at low temperature using inexpensive calibration standards. Using proper modeling of the matching networks adjusted for low temperature operation the measurement system can be easily optimized to achieve the best conditions for energy transfer and targeted bandwidth, and can be used for quantitative measurements of the device impedance. In this work we use gate reflectometry to readout the signal generated by arrays of parallel-connected Al-AlOx single-electron boxes. Such arrays can be used as a fast nanoscale voltage sensor for scanning probe applications. We perform measurements of sensitivity and bandwidth for various settings of the matching network connected to arrays and obtain strong agreement with the simulations.

A general approach to low noise readout of terahertz imaging arrays.

This article describes the theory and design of an ultra-low noise electronic readout circuit for use with room temperature video-rate terahertz imaging arrays. First, the noise characteristics of various imaging detectors, including low resistance bolometers and high resistance diodes are discussed. Theoretical approaches to white and 1/f noise mitigation are examined, and a corresponding low-noise readout circuit is designed, built, and tested. It is shown that the circuit is capable of achieving detector limited noise performance for use in room temperature terahertz imaging systems. A thorough noise analysis of the circuit provides the necessary information for applying the readout circuit to any type of imaging detector, and more generally, any measurement of small signals from various source impedances in the presence of white and 1/f noise. W-band measurements of an 8-element, high-resistance detector array, and a 32-element, low-resistance detector array demonstrate the usefulness of the readout circuit. Finally, recommended circuit configurations for various detectors in the literature are provided, with theoretical performance metrics summarized.