Selective Etching of Si versus Si1-xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant.

We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge concentration was etched slower due to the reduction in the Si(Ge)−OH bond. Owing to the difference in the etching rate, Si was selectively etched in the Si0.7Ge0.3/Si/Si0.7Ge0.3 multi-layer. The etching rate of Si depends on the Si surface orientation, as TMAH is an anisotropic etchant. The (111) and (010) facets were formed in TMAH, when Si was laterally etched in the <110> and <100> directions in the multi-layer, respectively. We also investigated the effect of the addition of Triton X-100 in TMAH on the wet etching process. Our results confirmed that the presence of 0.1 vol% Triton reduced the roughness of the etched Si and Si1−xGex surfaces. Moreover, the addition of Triton to TMAH could change the facet formation from (010) to (011) during Si etching in the <100>-direction. The facet change could reduce the lateral etching rate of Si and consequently reduce selectivity. The decrease in the layer thickness also reduced the lateral Si etching rate in the multi-layer.

Quasicrystalline phase-change memory.

Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) with low phase-change energy and sufficient thermal stability is difficult because phase-change energy and thermal stability decrease simultaneously as the amorphous phase destabilizes. This issue arising from the trade-off relationship between stability and energy consumption can be solved by reducing the entropic loss of phase-change energy as apparent in crystalline-to-crystalline phase-change process of a GeTe/Sb2Te3 superlattice structure. A paradigm shift in atomic crystallography has been recently produced using a quasi-crystal, which is a new type of atomic ordering symmetry without any linear translational symmetry. This paper introduces a novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase-change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure. This report includes a new concept that reduces entropic loss using a quasicrystalline state and takes the first step in the development of new PCMs with significantly low phase-change energy and considerably high thermal stability.