Optical performance of extreme ultraviolet lithography mask with an indium tin oxide absorber.

In this study, we propose a new extreme ultraviolet (EUV) binary mask with an indium tin oxide (ITO) absorber. The optical constant of ITO film at 13.5 nm wavelength in the EUV regime was determined by means of X-ray reflectivity measurements and the chemical composition was determined using Rutherford backscattering spectrometry. The reflectance of a binary mask with an ITO absorber layer at various thicknesses was also measured to investigate the optical performance in the EUV regime. It was found that the extinction coefficient of ITO film is higher than that of a typical absorber layer, TaN, and that the reflectance of the ITO absorber in the binary mask at a wavelength of 13.5 nm is reduced to 0.62% at a thickness of 45 nm. Therefore, it is expected that the ITO film can be employed as a thin absorber of a binary mask to reduce the geometrical shadow effect in extreme ultraviolet lithography.

Carbon contamination analysis and its effect on extreme ultra violet mask imaging performance using coherent scattering microscopy/in-situ accelerated contamination system.

The coherent scattering microscopy/in-situ accelerated contamination system (CSM/ICS) is a developmental metrology tool designed to analyze the impact of carbon contamination on the imaging performance. It was installed at 11B EUVL beam-line of the Pohang Accelerator Laboratory (PAL). Monochromatized 13.5 nm wavelength beam with Mo/Si multilayer mirrors and zirconium filters was used. The CSM/ICS is composed of the CSM for measuring imaging properties and the ICS for implementing acceleration of carbon contamination. The CSM has been proposed as an actinic inspection technique that records the coherent diffraction pattern from the EUV mask and reconstructs its aerial image using a phase retrieval algorithm. To improve the CSM measurement accuracy, optical and electrical noises of main chamber were minimized. The background noise level measured by CCD camera was approximately 8.5 counts (3 sigma) when the EUV beam was off. Actinic CD measurement repeatability was <1 A (3 sigma) at 17.5 nm line and space pattern. The influence of carbon contamination on the imaging properties can be analyzed by transferring EUV mask to CSM imaging center position after executing carbon contamination without a fine alignment system. We also installed photodiode and ellipsometry for in-situ reflectivity and thickness measurement. This paper describes optical design and system performance observed during the first phase of integration, including CSM imaging performance and carbon contamination analysis results.