RESUMO
A polarization-enhancing reflector design, which is matched to the emission characteristics of GaInN/GaN 460 nm light-emitting diodes grown on (0001) oriented sapphire substrates, is reported. Side-emitted light from these devices is known to be highly polarized with the electric field in the plane of the active region. Through selective rotation of polarization by the reflector, the in-plane polarized side-emitted light is directed upwards with a single dominant linear polarization. Polarization ratios as high as 3.5:1 are measured in the farfield, and the average polarization ratio is 1.9:1. If only light that strikes the reflector is considered, the polarization ratio is 2.5:1. The concept of the polarization-enhancing reflector and the numerical algorithm used to generate the optimized shape are also described.
