Giant Seebeck effect over 0.1 V K-1 - is this an intrinsic phenomenon in organic semiconductors?

A good solution for energy harvesting is to generate electricity using waste heat from our bodies or living environment. Therefore, the development of flexible and lightweight thermoelectric generators (TEGs) is urgently necessary, and studies on organic thermoelectric materials have become increasingly intensive. This article will present ongoing studies about a mysterious phenomenon in organic semiconductors, the giant Seebeck effect (GSE). The GSE was first discovered with pure C60 thin films and eventually confirmed to occur in various organic semiconductors. In the thin films or single crystals of organic small-molecule semiconductors with high purity, i.e., small carrier density, huge Seebeck coefficients, >0.1 V K-1, were reproducibly observed in the temperature range near 300-400 K. The facts revealed by the experiments to date will be presented, and unresolved mysteries will be discussed.

Influence of halogen elements in organic salts on n-type doping of CNT yarn for thermoelectric applications.

Doping control of carbon nanotube (CNT) is crucial for thermoelectric (TE) application to maximize the power conversion efficiency. Despite the recent achievement of good air stability by organic salts for n-type carrier doping, their doping mechanism has not been systematically investigated so far. Here, we demonstrate doping of CNT yarn using ammonium salts with different halogen elements (tetra-butylammonium salts, TBAX where X = Cl, Br, or I) through the dipping technique. By changing the halogen element, we specifically investigated the halogen effect in the n-type doping process of CNT. The introduction of each material into the CNT yarn and its doping reaction were then studied by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. Halogen element was found to affect the excess amount of TBA+ cation in the CNT yarn. The largest amount of excess TBA+ is found in the TBAI-doped yarn, which stabilizes the most amount of negative charge in CNT, enhancing the TE performance and its stability over one month in air. This study discovers the importance of the halogen element in the doping process of CNT-based TE materials by organic salts, simultaneously offering an efficient and stable n-type doping strategy.

Homologous Bromides Treatment for Improving the Open-Circuit Voltage of Perovskite Solar Cells.

The power conversion efficiency (PCE) of solution-processed organic-inorganic mixed halide perovskite solar cells has achieved rapid improvement. However, it is imperative to minimize the voltage deficit (Woc  = Eg /q - Voc ) for their PCE to approach the theoretical limit. Herein, the strategy of depositing homologous bromide salts on the perovskite surface to achieve a surface and bulk passivation for the fabrication of solar cells with high open-circuit voltage is reported. Distinct from the conclusions given by previous works, that homologous bromides such as FABr only react with PbI2 to form a large-bandgap perovskite layer on top of the original perovskite, this work shows that the bromide also penetrates the perovskite film and passivates the perovskite in the bulk. This is confirmed by the small-bandgap enlargement observed by absorbance and photoluminescence, and the bromide element ratio increasing in the bulk by time-of-flight secondary-ion mass spectrometry and depth-resolved X-ray photoelectron spectroscopy. Furthermore, a clear suppression of non-radiative recombination is confirmed by a variety of characterization methods. This work provides a simple and universal way to reduce the Woc of single-junction perovskite solar cells and it will also shed light on developing other high-performance optoelectronic devices, including perovskite-based tandems and light-emitting diodes.

Immediate and Temporal Enhancement of Power Conversion Efficiency in Surface-Passivated Perovskite Solar Cells.

This work reports strategies for improving the power conversion efficiency (PCE) by capitalizing on temporal changes through the storage effect and immediate improvements by interface passivation. It is demonstrated that both strategies can be combined as shown by PCE improvement in passivated perovskite solar cells (PSCs) upon ambient storage because of trap density reduction. By analyzing the dominant charge recombination process, we find that lead-related traps in perovskite bulk, rather than at the surface, are the recombination centers in both as-fabricated and ambient-stored passivated PSCs. This emphasizes the necessity to reduce intrinsic defects in the perovskite bulk. Furthermore, storage causes temporal changes in band alignment even in passivated PSCs, contributing to PCE improvement. Building on these findings, composition engineering was employed to produce further immediate PCE improvements because of defect reduction in the bulk, achieving a PCE of 22.2%. These results show that understanding the dominant recombination mechanisms within a PSC is important to inform strategies for producing immediate and temporal PCE enhancements either by interface passivation, storage, composition engineering, or a combination of them all to fabricate highly efficient PSCs.

Acetic Acid Assisted Crystallization Strategy for High Efficiency and Long-Term Stable Perovskite Solar Cell.

Improving the quality of perovskite poly-crystalline film is essential for the performance of associated solar cells approaching their theoretical limit efficiency. Pinholes, unwanted defects, and nonperovskite phase can be easily generated during film formation, hampering device performance and stability. Here, a simple method is introduced to prepare perovskite film with excellent optoelectronic property by using acetic acid (Ac) as an antisolvent to control perovskite crystallization. Results from a variety of characterizations suggest that the small amount of Ac not only reduces the perovskite film roughness and residual PbI2 but also generates a passivation effect from the electron-rich carbonyl group (C=O) in Ac. The best devices produce a PCE of 22.0% for Cs0.05FA0.80MA0.15Pb(I0.85Br0.15)3 and 23.0% for Cs0.05FA0.90MA0.05Pb(I0.95Br0.05)3 on 0.159 cm2 with negligible hysteresis. This further improves device stability producing a cell that maintained 96% of its initial efficiency after 2400 h storage in ambient environment (with controlled relative humidity (RH) <30%) without any encapsulation.

The Impact of a Dynamic Two-Step Solution Process on Film Formation of Cs0.15 (MA0.7 FA0.3 )0.85 PbI3 Perovskite and Solar Cell Performance.

This paper provides deep understanding of the formation mechanism of perovskite film fabricated by sequential solution-based methods. It compares two sequential spin-coating methods for Cs0.15 (MA0.7 FA0.3 )0.85 PbI3 perovskite. First is the "static process," with a stoppage between the two spin-coating steps (1st PbI2 -CsI-dimethyl sulfoxide (DMSO)-dimethylformamide (DMF) and 2nd methylammonium iodide (MAI)-formamidinium iodide (FAI)-isopropyl alcohol). Second is the "dynamic process," where the 2nd precursor is dispensed while the substrate is still spinning from the 1st step. For the first time, such a dynamic process is used for Cs0.15 (MA0.7 FA0.3 )0.85 PbI3 perovskite. Characterizations reveal improved film formation with the dynamic process due to the "retainment" of DMSO-complex necessary for the intermediate phase which i) promotes intercalation between precursors and ii) slows down perovskite crystallization for full conversion. The comparison on as-deposited perovskite before annealing indicates a more ordered film using this dynamic process. This results in a thicker, more uniform film with higher degree of preferred crystal orientation and higher carrier lifetime after annealing. Therefore, dynamic-processed devices present better performance repeatability, achieving a higher average efficiency of 17.0% compared to static ones (15.0%). The new insights provided by this work are important for perovskite solar cells processed sequentially as the process has greater flexibility in resolving solvent incompatibility, allowing separate optimizations and allowing different deposition methods.