Restoration of the inflammatory gene expression by horse oil in DNCB-treated mice skin.

The present study evaluated the anti-inflammatory effect of horse oil in 2, 4-dinitrochlorobenzene (DNCB)-treated BALB/c mice. After the application of DNCB, the mice showed atopic dermatitis symptoms, including severe erythema, hemorrhage, and erosion, whereas those symptoms were alleviated by treatment with horse oil. To explain the anti-dermatitis effect of horse oil, the gene expression levels in the healing process in dorsal skin were observed using a cDNA microarray. The cDNA microarray analysis revealed that the expression levels of 30 genes related to the inflammation, including Ccr1, Ccr2, Ccl20, Anxa1, and Hc genes, were up-regulated (higher than 2.0-fold) in the DNCB group compared to the levels in the control group, whereas the levels were restored to the control level in the DNCB + horse oil-treated group. In contrast, the gene expression levels of 28 genes related to inflammation, including chemokine genes Ccl5, Ccl7, Ccl8, Cxcl10, and Cxcl13 genes, were down-regulated (lower than 0.5-fold) in the DNCB group compared to the levels in the control group, whereas the levels were restored to the control level in the DNCB + horse oil-treated group. Overall, the results show that horse oil restores the expression levels of genes related to inflammation that were perturbed by DNCB treatment.

Averaging Pixel Current Adjustment Technique for Reducing Fixed Pattern Noise in the Bolometer-Type Uncooled Infrared Image Sensor.

In this paper, we propose an averaging pixel current adjustment technique for reducing fixed pattern noise (FPN) in the bolometer-type uncooled infrared image sensor. The averaging pixel current adjustment technique is composed of active pixel, reference pixel, and calibration circuit. Polysilicon resistors were used in each active pixel and reference pixel. Resistance deviation among active pixels integrated with the same resistance value cause FPN. The principle of the averaging pixel current adjustment technique for removing FPN is based on the subtraction of dark current of the active pixel from the dark current of the reference pixel. The subtracted current is converted into the voltage, which contains pixel calibration information. The calibration circuit is used to adjust the calibration current. After calibration, the nano-ampere current is output with small deviation. The proposed averaging pixel current adjustment technique is implemented by a chip composed of a pixel array, a calibration circuit, average current generators, and readout circuits. The chip was fabricated using a standard 0.35 µm CMOS process and its performance was evaluated.

Effects of Offset Pixel Aperture Width on the Performances of Monochrome CMOS Image Sensors for Depth Extraction.

This paper presents the effects of offset pixel aperture width on the performance of monochrome (MONO) CMOS image sensors (CISs) for a three-dimensional image sensor. Using a technique to integrate the offset pixel aperture (OPA) inside each pixel, the depth information can be acquired using a disparity from OPA patterns. The OPA is classified into two pattern types: Left-offset pixel aperture (LOPA) and right-offset pixel aperture (ROPA). These OPAs are divided into odd and even rows and integrated in a pixel array. To analyze the correlation between the OPA width and the sensor characteristics, experiments were conducted by configuring the test elements group (TEG) regions. The OPA width of the TEG region for the measurement varied in the range of 0.3-0.5 µm. As the aperture width decreased, the disparity of the image increased, while the sensitivity decreased. It is possible to acquire depth information by the disparity obtained from the proposed MONO CIS using the OPA technique without an external light source. Therefore, the proposed MONO CIS with OPA could easily be applied to miniaturized devices. The proposed MONO CIS was designed and manufactured using the 0.11 µm CIS process.

Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique.

A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However, in a CIS camera using OPA technique, apertures are integrated as left-offset pixel apertures (LOPAs) and right-offset pixel apertures (ROPAs). A color pattern is built, comprising LOPA, blue, red, green, and ROPA pixels. The disparity information can be acquired from the LOPA and ROPA channels. Both disparity information and two-dimensional (2D) color information can be simultaneously acquired from the LOPA, blue, red, green, and ROPA channels. A geometric model of the OPA technique is constructed to estimate the disparity of the image, and the measurement results are compared with the estimated results. Depth extraction is thus achieved by a single CIS using the OPA technique, which can be easily adapted to commercial CIS cameras.