Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process.

The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11). The estimated densities provide electron density uniformity. For demonstration, we compared it with the precise microwave probe and results revealed that the TUSI probe can monitor plasma uniformity. Furthermore, we demonstrated the operation of the TUSI probe beneath a quartz or wafer. In conclusion, the demonstration results indicated that the TUSI probe can be used as an instrument for a non-invasive in-situ method for measuring electron density uniformity.

Observation of prior light emission before arcing development in a low-temperature plasma with multiple snapshot analysis.

Arcing is a ubiquitous phenomenon and a crucial issue in high-voltage applied systems, especially low-temperature plasma (LTP) engineering. Although arcing in LTPs has attracted interest due to the severe damage it can cause, its underlying mechanism has yet to be fully understood. To elucidate the arcing mechanism, this study investigated various signals conventionally used to analyze arcing such as light emission, arcing current and voltage, and background plasma potential. As a result, we found that light emission occurs as early as 0.56 µs before arcing current initiation, which is a significant indicator of the explosive development of arcing as well as other signals. We introduce an arcing inducing probe (AIP) designed to localize arcing on the tip edge along with multiple snapshot analysis since arcing occurs randomly in space and time. Analysis reveals that the prior light emission consists of sheath and tip glows from the whole AIP sheath and the AIP tip edge, respectively. Formation mechanisms of these emissions based on multiple snapshot image analysis are discussed. This light emission before arcing current initiation provides a significant clue to understanding the arcing formation mechanism and represents a new indicator for forecasting arcing in LTPs.

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O2 plasma ashing process in various N2/O2 mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.

Study of Secondary Organic Aerosol Formation from Chlorine Radical-Initiated Oxidation of Volatile Organic Compounds in a Polluted Atmosphere Using a 3D Chemical Transport Model.

The impact of chlorine (Cl) chemistry on the formation of secondary organic aerosol (SOA) during a severe wintertime air pollution episode is investigated in this study. The Community Multiscale Air Quality (CMAQ) model v5.0.1 with a modified SAPRC-11 gas-phase mechanism and heterogeneous reactions for reactive chlorine species is updated to include the formation of chlorine radical (Cl•)-initiated SOA (Cl-SOA) from aromatic compounds, terpenes, and isoprene. Reported SOA yield data on Cl-SOA formation from environmental chamber studies are used to derive the mass yield and volatility data for the two-product equilibrium-partitioning model. The heterogeneous reaction of particulate chloride (pCl-) leads to a significant increase in the Cl• and hydroxyl radical (OH) concentrations throughout the domain. Monthly Cl-SOA concentrations range from 0.7 to 3.0 µg m-3, with increasing anthropogenic Cl emissions leading to higher Cl-SOA concentrations. Indirectly, this also leads to an increase of monthly SOA by up to 2.5-3.0 g µm-3 from the traditional OH oxidation pathways as well as the surface uptake of glyoxal and methylglyoxal. Increased OH concentrations, however, do not always lead to higher overall SOA concentrations in the entire domain. High OH reduces the lifetime of glyoxal/methylglyoxal (GLY/MGLY), making them less available to form SOA. In the Sichuan Basin (SCB) and part of Southwest China where high O3 concentrations meet high pCl emissions, a higher Cl•/OH ratio leads to net O3 loss from the Cl• + O3 reaction, thus reducing SOA formation from the O3 oxidation of volatile organic compounds (VOCs). Also, the competition between Cl• and OH for VOCs could lead to lower overall SOA because the molar yields of the semivolatile products in Cl-VOC reactions are lower than their OH + VOC reaction counterparts. When Cl• concentrations are further increased with higher emissions of Cl, precursor gases can be depleted and become the limiting factor in SOA formation. This study reveals the direct and indirect impacts of chlorine chemistry on SOA in polluted winter conditions, which are greatly affected by the Cl emissions, the ambient O3 level, and the availability of SOA precursors.