Grain-size adjustment in Hf0.5Zr0.5O2ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitor.

By adjusting the rising time in annealing ferroelectric HfO2-based films, the grain size of the film can be controlled. In this study, we found that increasing the rising time from 10 to 30 s at an annealing temperature of 700 °C in N2atmosphere resulted in improved ferroelectric switching speed. This is because the larger grain size reduces the internal resistance components, such as the grain bulk resistance and grain boundary resistance, of the HZO film. This in turn lowers the overall equivalent resistance. By minimizing the RC time constants, increasing the grain size plays a key role in improving the polarization switching speed of ferroelectric films.

Identification of potential biomarkers related to mesenchymal stem cell response in patients with Alzheimer's disease.

BACKGROUND: Preclinical studies showed that mesenchymal stem cells (MSCs) ameliorate tau phosphorylation, amyloid-beta accumulation, and inflammation in Alzheimer's disease (AD) mouse models via secretion of neurotrophic factors and cytokines. We aimed to identify CSF biomarkers that can be used to predict or monitor the response to MSCs in patients with AD. METHODS: AD patients were injected with human umbilical cord blood-MSCs (n = 22) or placebo (n = 12). The cerebrospinal fluid (CSF) samples were collected at baseline, one day after the first injection, and one day after the third injection. The patients injected with MSCs were classified into good responder (GR) or poor responder (PR) groups based on the rate of changes in the ratio of total-tau and phosphorylated-tau in the CSF. We selected three typical participants in each group, and their CSF protein levels were analyzed using liquid chromatography/tandem mass spectrometry (LC-MS/MS). RESULTS: In the LC-MS/MS analysis, 1,667 proteins were identified. Eleven proteins showed significant differences between the typical GR and PR at baseline. Based on their significance level and known functions, two proteins, reticulocalbin-3 (RCN3) and follistatin-related protein 3 (FSTL3), were selected as potential biomarkers to predict MSC response. A total of 173 proteins showed significant change one day after the third injection compared to the baseline in typical GR. We excluded 45 proteins that showed significant change after the third injection compared to the baseline in the typical PR. Based on their significance level and known function, four proteins, scrapie-responsive protein 1 (SCRG1), neural proliferation differentiation and control protein (NPDC1), apolipoprotein E (ApoE), and cystatin C (CysC), were selected as potential biomarker to monitor MSC response. Additionally, functional analysis revealed that the increased CSF proteins after the third injection compared to the baseline in the typical GR were associated with synaptogenesis. CONCLUSIONS: This study identified two proteins (RCN3 and FSTL3) that may be potential biomarkers for predicting MSC response and four proteins (SCRG1, NPDC1, ApoE, CysC) that may be potential biomarkers for monitoring MSC response in patients with AD. Further studies are needed to validate our results. Trial registration Clinical Trials.gov, NCT02054208. Registered on 4 February 2014. Samsung Medical Center IRB File No.2017-04-025. Registered on 20 June 2017.

Experimental study of endurance characteristics of Al-doped HfO2ferroelectric capacitor.

In this work, the endurance characteristics of Al-doped HfO2(HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the high annealing temperature (1000 °C) process. To investigate the impact of cycling pulses on the endurance characteristics of HAO-based MFM capacitor, the rise/fall time (tr/f) and hold time (th) for the cycling pulses were varied. Moreover, by adopting the recoverable fatigue process, the endurance characteristics under repetitive wake-up/fatigue processes were studied. The HAO capacitors achieved the remnant polarization (2Pr) of 23.767µC cm-2at pristine state under the high annealing temperature. Furthermore, it was demonstrated that the endurance characteristics (∼108cycles) of the HAO capacitors were comparable to them of other HfO2-based ferroelectric capacitors. Lastly but not least, it turned out that the amount of oxygen and oxygen vacancies in the HAO thin film was dependent of doping concentrations for the film. The impact of oxygen and oxygen vacancies was quantitatively analyzed, in detail, with TEM, XPS and GIXRD analysis.

Iron Oxide Nanoparticle-Incorporated Mesenchymal Stem Cells for Alzheimer's Disease Treatment.

Alzheimer's disease (AD) is a neurodegenerative disease with multifactorial pathogenesis. However, most current therapeutic approaches for AD target a single pathophysiological mechanism, generally resulting in unsatisfactory therapeutic outcomes. Recently, mesenchymal stem cell (MSC) therapy, which targets multiple pathological mechanisms of AD, has been explored as a novel treatment. However, the low brain retention efficiency of administered MSCs limits their therapeutic efficacy. In addition, autologous MSCs from AD patients may have poor therapeutic abilities. Here, we overcome these limitations by developing iron oxide nanoparticle (IONP)-incorporated human Wharton's jelly-derived MSCs (MSC-IONPs). IONPs promote therapeutic molecule expression in MSCs. Following intracerebroventricular injection, MSC-IONPs showed a higher brain retention efficiency under magnetic guidance. This potentiates the therapeutic efficacy of MSCs in murine models of AD. Furthermore, human Wharton's jelly-derived allogeneic MSCs may exhibit higher therapeutic abilities than those of autologous MSCs in aged AD patients. This strategy may pave the way for developing MSC therapies for AD.

Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation.

In this work, the impact of fluorine (CF4) and oxygen (O2) plasma passivation on HfZrOx (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors were suppressed, resulting in the increased pristine remnant polarization (2Pr). The pristine value (2Pr) of baseline samples annealed at 500 °C and 600 °C were 11.4 µC/cm2 and 24.4 µC/cm2, respectively. However, with the F-passivation, the 2Pr values were increased to 30.8 µC/cm2 and 48.2 µC/cm2 for 500 °C and 600 °C, respectively. The amount of surface defects and oxygen vacancies are quantitatively confirmed by the conductance method and XPS analysis. However, due to the incorporation of fluorine atoms into the ferroelectric-insulator films, undesirable degradation on endurance characteristics were observed.

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor.

The endurance characteristic of Zr-doped HfO2 (HZO)-based metal-ferroelectric-metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. The chamber temperature in the ALD process was set to 120 °C, 200 °C, or 250 °C, and the annealing temperature was set to 400 °C, 500 °C, 600 °C, or 700 °C. For the given annealing temperature of 700 °C, the remnant polarization (2Pr) was 17.21 µC/cm2, 26.37 µC/cm2, and 31.8 µC/cm2 at the chamber temperatures of 120 °C, 200 °C, and 250 °C, respectively. For the given/identical annealing temperature, the largest remnant polarization (Pr) was achieved when using the chamber temperature of 250 °C. At a higher annealing temperature, the grain size in the HZO layer becomes smaller, and thereby, it enables to boost up Pr. It was observed that the endurance characteristics for the capacitors fabricated under various annealing/chamber temperatures were quite different. The different endurance characteristics are due to the oxygen and oxygen vacancies in ferroelectric films, which affects the wakeup/fatigue behaviors. However, in common, all the capacitors showed no breakdown for an externally applied pulse (up to 108 cycles of the pulse).

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate.

Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1, 3:2, and 3:3) were fabricated and studied. The threshold voltage of the devices was increased from 0.9 V to 3.2 V, as the relative contents of Al2O3 layer in the superlattice were increased. At the same time, it is demonstrated that the off-resistance values of the devices were enhanced from 2.6 109 to 6 1010 as the atomic layer deposition (ALD) cycle ratio of HfO2 to Al2O3 layer was adjusted from 3:1 to 3:3. However, the hold voltage and the on-current values were almost identical for the three devices. These results can be understood using the larger barrier height of Al2O3 layer than that of HfO2 layer.

CXXC5 mediates growth plate senescence and is a target for enhancement of longitudinal bone growth.

Longitudinal bone growth ceases with growth plate senescence during puberty. However, the molecular mechanisms of this phenomenon are largely unexplored. Here, we examined Wnt-responsive genes before and after growth plate senescence and found that CXXC finger protein 5 (CXXC5), a negative regulator of the Wnt/ß-catenin pathway, was gradually elevated with reduction of Wnt/ß-catenin signaling during senescent changes of rodent growth plate. Cxxc5 -/- mice demonstrated delayed growth plate senescence and tibial elongation. As CXXC5 functions by interacting with dishevelled (DVL), we sought to identify small molecules capable of disrupting this interaction. In vitro screening assay monitoring CXXC5-DVL interaction revealed that several indirubin analogs were effective antagonists of this interaction. A functionally improved indirubin derivative, KY19382, elongated tibial length through delayed senescence and further activation of the growth plate in adolescent mice. Collectively, our findings reveal an important role for CXXC5 as a suppressor of longitudinal bone growth involving growth plate activity.

Synthesis and biological evaluation of novel thieno[2,3-d]pyrimidine-based FLT3 inhibitors as anti-leukemic agents.

The most common mutations in acute myeloid leukemia (AML) are those that cause the activation of FMS-like tyrosine kinase 3 (FLT3). Therefore, FLT3 is regarded as a potential target for the treatment of AML. A novel series of thieno[2,3-d]pyrimidine-based analogs was designed and synthesized as FLT3 inhibitors. All synthesized compounds were assayed for the tyrosine kinase activity of FLT3 and growth inhibitory activity in four human leukemia cell lines (THP1, MV4-11, K562, and HL-60). Among these compounds, compound 17a, which possesses relatively short and simple substituents at the C6 position of thieno[2,3-d]pyrimidine, emerged as the most promising anti-leukemic agent. Compound 17a exhibited potent inhibition of FLT3-positive leukemic cell growth and of the FLT3 D835Y kinase; such inhibition is required for the successful treatment of AML. The data supports the further investigation of this class of compounds as potential anti-leukemic agents.