Nano-Si for On-Demand H2 Production: Optimization of Yield and Real-Time Visualization of Si─H2 O Reaction Using Liquid-Phase Transmission Electron Microscopy.

Hydrogen (H2 ), the most abundant element in the universe, has the potential to address the challenges of energy security and climate change. However, due to the lack of a safe and efficient method for storing and delivering hydrogen, its practical application is still in its infancy stages. To overcome this challenge, a promising solution is demonstrated in the form of on-demand production of H2 using nano-Silicon (Si) powders. The method offers instantaneous production of H2 , yielding a volume of 1.3 L per gram of Si at room temperature. Moreover, the H2 production yield and the rate can be effectively controlled by adjusting the reaction pH value and temperatures. Additionally, liquid-phase transmission electron microscopy (LPTEM) is utilized in situ to demonstrate the entire reaction in real-time, wherein H2 bubble formation is observed and illustrated the gradual conversion of crystalline Si particles into amorphous oxides. Moreover, it is confirmed that the purity of the generated gas is 99.5% using gas chromatography mass spectrometry (GC-MS). These findings suggest a viable option for instant H2 production in portable fuel cells using Si cartridges or pellets.

Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films.

Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga(+) fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 × 10(16) cm(-2) is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H(2) treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 × 10(16) cm(-2), Ga(+) ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H(2) etching due to the higher electronegativity of Ga(+) towards oxygen. However, for the fluences ≥ 4.6 × 10(16) cm(-2), the surface particles are responsible for the etch stop and are identified as ZnGa(2)O(4). We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

Enhanced spontaneous light emission by multiple surface plasmon coupling.

Photoluminescence of polyfluoren copolymers, a white-light material, was demonstrated to be enhanced selectively by coupling with either localized or propagating modes of surface plasmon resonance (SPR). The silver sub-micron cylinders with 75nm height fabricated by e-beam lithography followed by e-beam evaporation and lift-off process. The enhanced light emissions at 500nm and 533nm are attributed to the low frequency branch of localized SPR. Furthermore, a 50nm silver thin film between these cylinders and the substrate provides propagating surface plasmons under excitation and enhances the blue emission band of the polyfluoren copolymer at 438nm. This delocalized SPR is sufficient for effective plasmon to light conversion. Moreover, by effectively coupling the localized and propagating SPR, we can experimentally demonstrate that the photoluminescence of polyfluoren copolymers is enhanced by 4 to 5.4 times at different wavelengths compared to enhancement by either single mode.

The synthesis and electrical characterization of Cu2O/Al:ZnO radial p-n junction nanowire arrays.

Vertically aligned large-area p-Cu(2)O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu(2)O nano-shells with thicknesses around 10 nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50 nm were determined to be around 1.19 at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu(2)O nano-shells. The current-voltage (I-V) measurements show that the p-Cu(2)O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solar cells.