Interplay of Landau Quantization and Interminivalley Scatterings in a Weakly Coupled Moiré Superlattice.

Double-layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double-layer system composed of a large-angle twisted-double-bilayer graphene (TDBG). We quantify the interlayer coupling strength by measuring the interlayer capacitance from the QOs pattern at low temperatures, revealing electron-hole asymmetry. At high temperatures when SdHOs are thermally smeared, we observe resistance peaks when Landau levels (LLs) from two moiré minivalleys are aligned, regardless of carrier density; eventually, it results in a 2-fold increase of oscillating frequency in D, serving as compelling evidence of the magneto-intersub-band oscillations (MISOs) in double-layer systems. The temperature dependence of MISOs suggests that electron-electron interactions play a crucial role and the scattering times obtained from MISO thermal damping are correlated with the interlayer coupling strength. Our study reveals intriguing interplays among Landau quantization, moiré band structure, and scatterings.

Low power flexible monolayer MoS2 integrated circuits.

Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS2 ICs in portable, wearable, and implantable electronics.

Quantum oscillations in field-induced correlated insulators of a moiré superlattice.

We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ∼10 K, and above 12 K, the insulating behaviors are dominant. The QOs of the insulator are strongly D dependent: the carrier density extracted from the 1/B periodicity decreases almost linearly with D from -0.7 to -1.1 V/nm, suggesting a reduced Fermi surface; the effective mass from Lifshitz-Kosevich analysis depends nonlinearly on D, reaching a minimal value of 0.1 me at D = ∼ -1.0 V/nm. Similar observations of QOs are also found at v = 2, as well as in other devices without graphite gate. We interpret the D sensitive QOs of the correlated insulators in the picture of band inversion. By reconstructing an inverted band model with the measured effective mass and Fermi surface, the density of state at the gap, calculated from thermal broadened Landau levels, agrees qualitatively with the observed QOs in the insulators. While more theoretical understandings are needed in the future to fully account for the anomalous QOs in this moiré system, our study suggests that TDBG is an excellent platform to discover exotic phases where correlation and topology are at play.

Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance.

Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS2 FETs. The fabricated 9 nm channel MoS2 FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 µA/µm at VDS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 107 and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS2 FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.

Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS_{2}.

Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated electronic states and layer-hybridized SU(4) model simulator in AB-stacked MoS_{2} homobilayer moiré superlattices. Correlated insulating states at moiré band filling factors v=1, 2, 3 are unambiguously established in twisted bilayer MoS_{2}. Remarkably, the correlated electronic state at v=1 shows a giant correlated gap of ∼126 meV and may persist up to a record-high critical temperature over 285 K. The realization of a possible room-temperature correlated state with a large correlated gap in twisted bilayer MoS_{2} can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large nonlinear Hall responses up to room temperature are uncovered near correlated electronic states, demonstrating the quantum geometry of moiré flat conduction band.

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene.

New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin-polarized states to valley-polarized states in twisted double bilayer graphene (TDBG) driven by the displacement field (D). At a high field |D | > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.

Layer-by-layer epitaxy of multi-layer MoS2 wafers.

The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer. However, achieving high-quality multi-layer MoS2 wafers remains a challenge. Here we report the growth of high-quality multi-layer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements in device performances were found in thicker-layer field-effect transistors (FETs), as expected. For example, the average field-effect mobility (µ FE) at room temperature (RT) can increase from ∼80 cm2·V-1·s-1 for monolayers to ∼110/145 cm2·V-1·s-1 for bilayer/trilayer devices. The highest RT µ FE of 234.7 cm2·V-1·s-1 and record-high on-current densities of 1.70 mA·µm-1 at V ds = 2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio of >107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.