RESUMO
We report on the photoresponse of an asymmetrically doped p(-)-Ge/n(+)-Si heterojunction photodiode fabricated by wafer bonding. Responsivities in excess of 1 A/W at 1.55 µm are measured with a 5.4 µm thick Ge layer under surface-normal illumination. Capacitance-voltage measurements show that the interfacial band structure is dependent on both temperature and light level, moving from depletion of holes at -50 °C to accumulation at 20 °C. Interface traps filled by photo-generated and thermally-generated carriers are shown to play a crucial role. Their filling alters the potential barrier height at the interface leading to increased flow of dark current and the above unity responsivity.
Assuntos
Cristalização/métodos , Germânio/química , Fotometria/instrumentação , Semicondutores , Silício/química , Desenho de Equipamento , Análise de Falha de Equipamento , Germânio/efeitos da radiação , Teste de Materiais , Silício/efeitos da radiação , TemperaturaRESUMO
After spinal cord injury, electrical stimulation of the roots inside the spinal column at the level of the cauda equina is a safe and effective way to regain some degree of control over lower body function, e.g. bladder and bowel management and leg movement. The success of current systems used for so-called intrathecal stimulation is limited by the low number of stimulation channels, which are in consequence of the maximum acceptable number of transdural cables. In order to overcome this limitation, we developed an active electrode with integrated electronics, providing four individual stimulation channels that requires one cable only. This paper outlines the different elements of the so-called active book with the emphasis on its preliminary construction and assembly.