Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation.

Single crystals of 4H-SiC were irradiated with swift heavy ions (332 MeV Ti, 106 MeV Pb and 2.7 GeV U) in the electronic energy loss regime. The resulting damage was investigated with UV-visible optical absorption spectroscopy and micro-Raman spectroscopy. The evolution of the Raman data with fluence shows an accumulation of isolated point defects without amorphization of the material and a partial recrystallization of the structure, but only at the lowest fluence. Furthermore, the longitudinal optical phonon-plasmon coupling mode disappears upon irradiation, suggesting a strong perturbation of the electronic structure. This evolution is consistent with the optical bandgap decrease and the Urbach edge broadening that was also previously observed for the irradiation with 4 MeV Au ions.

Paramagnetic defects induced by electron irradiation in barium hollandite ceramics for caesium storage.

We have studied by electron paramagnetic resonance the mechanism of defect production by electron irradiation in barium hollandite, a material used for immobilization of radioactive caesium. The irradiation conditions were the closest possible to those occurring in Cs storage waste forms. Three paramagnetic defects were observed, independently of the irradiation conditions. A hole centre (H centre) is attributed to a superoxide ion O(2)(-) originating from hole trapping by interstitial oxygen produced by electron irradiation. An electron centre (E(1) centre) is attributed to a Ti(3+) ion adjacent to the resulting oxygen vacancy. Another electron centre (E(2) centre) is attributed to a Ti(3+) ion in a cation site adjacent to an extra Ba(2+) ion in a neighbouring tunnel, originating from barium displacement by elastic collisions. Comparison of the effects of external irradiations by electrons with the ß-decay of Cs in storage waste forms is discussed. It is concluded that the latter would be dominated by E(1) and H centres rather than E(2) centres.

Study of damage in ion-irradiated α-SiC by optical spectroscopy.

UV-visible absorption and Raman scattering spectroscopy were used to investigate the effects of 4 MeV Xe-ion and 4 MeV Au-ion irradiations on α-SiC single crystals. The evolution of transmission spectra upon irradiation evidences an increase of the optical absorption. The optical band-gap energy decreases versus fluence, which is linked to band-gap closure attributed to the creation of localized states into the forbidden energy band. A strong effect of the irradiation temperature is observed as a result of dynamic annealing enhanced by the temperature increase. The Urbach energy increases versus fluence due to disorder accumulation in the damaged layer. Comparison of Urbach energy and disorder parameters extracted from Raman spectra shows that the Urbach energy is sensitive to the disorder induced by the accumulation of point defects.