RESUMO
Microwave Kinetic Inductance Detectors (MKIDs) are photon detectors comprised of superconducting LC resonators with unique resonant frequencies corresponding to their geometrical structure. As each pixel has its own geometry, electromagnetic simulations by hand of every pixel in a kilo-pixel array are impractical. Simulating fewer pixels and interpolating in between risks reduced pixel yield in arrays due to overlapping resonant frequencies. We introduce a new software called AEM (Automated Electromagnetic MKID simulations) that automates the construction and simulation of every simulated MKID pixel in an array according to specified resonant frequencies and a Q c range. We show automated designs to have an increased pixel yield (avoiding loses due to interpolation completely), increased accuracy in resonance frequency and Q c values when compared to interpolated structures. We also demonstrate a simulated trial of AEM for 100 MKIDs between 4 and 8 GHz to produce MKIDs with accuracies of ± 0.2 MHz with a runtime of 10 h 45 min.
RESUMO
Microwave Kinetic Inductance Detectors (MKIDs) combine significant advantages for photon detection like single photon counting, single pixel energy resolution, vanishing dark counts and µs time resolution with a simple design and the feasibility to scale up into the megapixel range. But high quality MKID fabrication remains challenging as established superconductors tend to either have intrinsic disadvantages, are challenging to deposit or require very low operating temperatures. As alternating stacks of thin Ti and TiN films have shown very impressive results for far-IR and sub-mm MKIDs, they promise significant improvements for UV, visible to near-IR MKIDs as well, especially as they are comparably easy to fabricate and control. In this paper, we present our ongoing project to adapt proximity coupled superconducting films for photon counting MKIDs. Some of the main advantages of Ti/TiN multilayers are their good control of critical temperature (T c) and their great homogeneity of T c even over large wafers, promising improved pixel yield especially for large arrays. We demonstrate the effect different temperatures during fabrication have on the detector performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. Our first prototypes achieved photon energy resolving powers of up to 3.1 but turned out to be much too insensitive. As the work presented is still in progress, we also discuss further improvements planned for the near future.