Silicon-Aluminum Phase-Transformation-Induced Superconducting Rings.

The development of devices that exhibit both superconducting and semiconducting properties is an important endeavor for emerging quantum technologies. We investigate superconducting nanowires fabricated on a silicon-on-insulator (SOI) platform. Aluminum from deposited contact electrodes is found to interdiffuse with Si along the entire length of the nanowire, over micrometer length scales and at temperatures well below the Al-Si eutectic. The phase-transformed material is conformal with the predefined device patterns. The superconducting properties of a transformed mesoscopic ring formed on a SOI platform are investigated. Low-temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.

Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases.

Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at room temperature. The synthesis is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. Ultrathin InN nanosheets with a thickness of ∼2 ± 0.2 nm were isolated over large areas with lateral dimensions exceeding centimeter scale. Room temperature Hall effect measurements reveal carrier mobilities of ∼216 and ∼148 cm2 V-1 s-1 for undoped and doped InN, respectively. Further analysis suggests the presence of defined quantized states in these ultrathin nitride nanosheets that can be attributed to a 2D electron gas forming due to strong out-of-plane confinement. Overall, the combination of electronic and plasmonic features in undoped and doped ultrathin 2D InN holds promise for creating advanced optoelectronic devices and functional 2D heterostructures.

Observation of Rayleigh phonon scattering through excitation of extremely high overtones in low-loss cryogenic acoustic cavities for hybrid quantum systems.

The confinement of high frequency phonons approaching 1 GHz is demonstrated in phonon-trapping acoustic cavities at cryogenic temperatures using a low-coupled network approach. The frequency range is extended by nearly an order of magnitude, with excitation at greater than the 200th overtone achieved for the first time. Such a high frequency operation reveals Rayleigh-type phonon scattering losses due to highly diluted lattice impurities and corresponding glasslike behavior, with a maximum Q(L)×f product of 8.6×10(17) at 3.8 K and 4×10(17) at 15 mK. This suggests a limit on the Q×f product due to unavoidable crystal disorder. Operation at 15 mK is high enough in frequency that the average phonon occupation number is less than unity, with a loaded quality factor above half a billion. This work represents significant progress towards the utilization of such acoustic cavities for hybrid quantum systems.

Frequency conversion in a high Q-factor sapphire whispering gallery mode resonator due to paramagnetic nonlinearity.

Nonlinear frequency conversion is a well known and widely exploited family of effects in optics, often arising from a Kerr nonlinearity in a crystal medium. Here, we report high stability frequency conversion in the microwave regime due to a χ(3) nonlinearity in sapphire introduced by a dilute concentration of paramagnetic spins. First, we produce a high stability comb from two microwave fields at 12.029 and 12.037 GHz corresponding to two high Q-factor whispering gallery (WG) modes within the electron spin resonance bandwidth of the Fe3+ ion. The resulting comb is generated by a cascaded four-wave mixing effect with a 7.7 MHz repetition rate. Then, by suppressing four-wave mixing by increasing the threshold power, third harmonic generation is achieved in a variety of WG modes coupled to various species of paramagnetic ion within the sapphire.

Four-wave mixing from Fe3+ spins in sapphire.

Fe(3+) ions in sapphire exhibit an electron spin resonance which interacts strongly with high-Q whispering gallery modes at microwave frequencies. We report the first observation of a third-order paramagnetic nonlinear susceptibility in such a resonator at cryogenic temperatures and the first demonstration of four-wave mixing using this parametric nonlinearity. This observation of an all-microwave nonlinearity is an enabling step towards a host of quantum measurement and control applications which utilize spins in solids.

High-power solid-state sapphire whispering gallery mode maser.

We present new results on a cryogenic solid-state maser frequency standard, which relies on the excitation of whispering gallery (WG) modes within a doped monocrystalline sapphire resonator (alpha-Al2O3). Included substitutively within the highest purity HEMEX-grade sapphire crystal lattice are Fe2+ impurities at a concentration of parts per million, an unavoidable result of the manufacturing process. Mass conversion of Fe2+ to Fe3+ ions was achieved by thermally annealing the sapphire in air. Above-threshold maser oscillation was then excited in the resonator at zero applied DC magnetic field by pumping high-Q WG modes coincident in frequency with the electron spin resonance (ESR) energy levels of the Fe3+ spin population. A 2 stage annealing process was undertaken for a sapphire resonator with exceptionally low Fe3+ concentration, resulting in an improvement of 6 orders of magnitude in output power for this particular crystal, and exceeding the previous best implementation of our scheme in another crystal by nearly 20 dB. This represents an output signal 7 orders of magnitude more powerful than a typical commercial hydrogen maser. At this power level, we estimate a limit on the frequency stability of order 1 x 10(-17)/square root(tau) due to the Schawlow-Townes fundamental thermal noise limit.