A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness.

A novel high-speed and process-compatible carrier-stored trench-gate bipolar transistor (CSTBT) combined with split-gate technology is proposed in this paper. The device features a split polysilicon electrode in the trench, where the left portion is equipotential with the cathode. This design mitigates the impact of the anode on the trench gate, resulting in a reduction in the gate-collector capacitance (CGC) to improve the dynamic characteristics. On the left side of the device cell, the P-layer, the carrier-stored (CS) layer and the P-body are formed from the bottom up by ion implantation and annealing. The P-layer beneath the trench bottom can decrease the electric field at the bottom of the trench, thereby improving breakdown voltage (BV) performance. Simultaneously, the highly doped CS layer strengthens the hole-accumulation effect at the cathode. Moreover, the PNP doping layers on the left form a self-biased pMOS. In a short-circuit state, the self-biased pMOS turns on at a certain collector voltage, causing the potential of the CS-layer to be clamped by the hole channel. Consequently, the short-circuit current no longer increases with the collector voltage. The simulation results reveal significant improvements in comparison with the conventional CSTBT under the same on-state voltage (1.48 V for 100 A/cm2). Specifically, the turn-off time (toff) and turn-off loss (Eoff) are reduced by 38.4% and 41.8%, respectively. The short-circuit current is decreased by 50%, while the short-circuit time of the device is increased by 2.46 times.

A Performance Optimized CSTBT with Low Switching Loss.

A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. By applying a positive DC voltage to the shield gate, the carrier storage effect is enhanced, the hole blocking capability is improved and the conduction loss is reduced. The DC biased shield gate naturally forms inverse conduction channel to speed up turn-on period. Excess holes are conducted away from the device through the hole path to reduce turn-off loss (Eoff). In addition, other parameters including ON-state voltage (Von), blocking characteristic and short circuit performance are also improved. Simulation results demonstrate that our device exhibits a 35.1% and 35.9% decrease in Eoff and turn-on loss (Eon), respectively, in comparison with the conventional shield CSTBT (Con-SGCSTBT). Additionally, our device achieves a short-circuit duration time that is 2.48 times longer. In high-frequency switching applications, device power loss can be reduced by 35%. It should be noted that the additional DC voltage bias is equivalent to the output voltage of the driving circuit, enabling an effective and feasible approach towards high-performance power electronics applications.

Debris flow characteristics of the compound channels with vegetated floodplains.

Compound cross-sections with vegetated floodplains are a common type of cross-section in debris-flow gullies. Floodplain vegetation participates in large-scale debris flow events and regulates debris-flow discharge. Extensive research has been conducted on the water flow characteristics of compound rivers. However, few studies have investigated the debris flow characteristics of compound channels in mountainous areas, particularly those of debris flow and flash flood inundation areas with vegetation. This study discusses the section characteristics of debris flow gullies with vegetated floodplains, gully evolution processes, and their influence on debris flow. The results show that the compound debris flow gully with a vegetated floodplain is formed in the gully from the mature stage to the old-mature stage. The compound sections are developed in flow areas with a gentle slope, which can be bilateral floodplain, unilateral floodplain, and multi-main gully floodplain types. Owing to the vegetation of the floodplain, the roughness of the channel increases, which makes the beach roughness coefficient much larger than that for the main channel. In the integrated Manning coefficient method, the error in resolving the flow velocity and discharge is large and cannot reflect the difference in velocities of the floodplain and main channel, therefore the sectional splitting method is most applicable. Influencing debris flow movement, limiting channel migration, and retaining debris flow to the main channel were the main contributions of the riparian forest zone.

Unraveling the Phase Transition and Luminescence Tuning of Pb-Free Cs-Cu-I Perovskites Enabled by Reaction Temperature and Polar Solvent.

Ternary Pb-free Cs-Cu-I perovskites have attracted widespread attention because of their excellent optical properties and environmentally friendly advantages. Herein, two different Pb-free ternary Cs3Cu2I5 nanocrystals (NCs) and CsCu2I3 microrods (MRs) were synthesized via a heating method. The phase and morphology transition from blue emission of Cs3Cu2I5 NCs to yellow emission of CsCu2I3 MRs could be tuned effectively by manipulating the reaction temperature, decreasing the maximum photoluminescence quantum yields (PLQYs) from 82.7% to ∼10%. More interestingly, the Cs3Cu2I5 NCs could self-assemble into stacking chains, which exhibited a strong dependence on the polarity of solvents. In addition, it was demonstrated that the rapid phase transition and luminescence tuning between Cs3Cu2I5 and CsCu2I3 films took only a few seconds by direct heating or exposure to the polar solvent. This work may deepen the understanding of the phase transition process in Cu-based perovskites and provide a fluorescence material with a short switching time for anticounterfeiting applications.