3D Printing of Composite Radiation Shielding for Broad Spectrum Protection of Electronic Systems.

The miniaturization of satellite systems has compounded the need to protect microelectronic components from damaging radiation. Current approaches to mitigate this damage, such as indiscriminate mass shielding, built-in redundancies, and radiation-hardened electronics, introduce high size, weight, power, and cost penalties that impact the overall performance of the satellite or launch opportunities. Additive manufacturing provides an appealing strategy to deposit radiation shielding only on susceptible components within an electronic assembly. Here, a versatile material platform and process to conformally print customized composite inks at room temperature directly and selectively onto commercial-off-the-shelf electronics is described. The suite of inks uses a flexible styrene-isoprene-styrene block copolymer binder that can be filled with particles of different atomic densities for diverging radiation shielding capabilities. Additionally, the system enables the combination of multiple distinct particle species within the same printed structure. The method can produce graded shielding that offers improved radiation attenuation by tailoring both shield geometry and composition to provide comprehensive protection from a broad range of radiation species. The authors anticipate this alternative to traditional shielding methods will enable the rapid proliferation of the next generation of compact satellite designs.

Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides.

Homogeneous ternary oxides of silicon-, niobium-, and molybdenum-aluminate were deposited by plasma-enhanced ALD using sequential metal precursor pulses prior to the oxidation step, to reduce interfacial defects usually observed in nanolaminate growth. The growth kinetics can be understood in terms of competitive adsorption. Trimethyl aluminum (TMA) is strongly chemisorbed to the growth surface and does not permit coadsorption of any of the other precursors; when we lead with a TMA pulse, the resulting film is always Al2O3. When we lead with the Si or Nb precursors, the growth surface is partially saturated, but open sites are available for TMA coadsorption. The Mo precursor is weakly chemisorbed and is largely displaced by a subsequent TMA dose. As compared to nanolaminate films of the constituent binary oxides, the interface state density is reduced by up to a factor of 5.