Ultrafast and Low-Power 2D Bi2O2Se Memristors for Neuromorphic Computing Applications.

Memristors that emulate synaptic plasticity are building blocks for opening a new era of energy-efficient neuromorphic computing architecture, which will overcome the limitation of the von Neumann bottleneck. Layered two-dimensional (2D) Bi2O2Se, as an emerging material for next-generation electronics, is of great significance in improving the efficiency and performance of memristive devices. Herein, high-quality Bi2O2Se nanosheets are grown by configuring mica substrates face-down on the Bi2O2Se powder. Then, bipolar Bi2O2Se memristors are fabricated with excellent performance including ultrafast switching speed (<5 ns) and low-power consumption (<3.02 pJ). Moreover, synaptic plasticity, such as long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are demonstrated in the Bi2O2Se memristor. Furthermore, MNIST recognition with simulated artificial neural networks (ANN) based on conductance modification could reach a high accuracy of 91%. Notably, the 2D Bi2O2Se enables the memristor to possess ultrafast and low-power attributes, showing great potential in neuromorphic computing applications.

Ultralight, Elastic, Hybrid Aerogel for Flexible/Wearable Piezoresistive Sensor and Solid-Solid/Gas-Solid Coupled Triboelectric Nanogenerator.

Aerogels have been attracting wide attentions in flexible/wearable electronics because of their light weight, excellent flexibility, and electrical conductivity. However, multifunctional aerogel-based flexible/wearable electronics for human physiological/motion monitoring, and energy harvest/supply for mobile electronics, have been seldom reported yet. In this study, a kind of hybrid aerogel (GO/CNT HA) based on graphene oxide (GO) and carboxylated multiwalled carbon nanotubes (CMWCNTs) is prepared which can not only used as piezoresistive sensors for human motion and physiological signal detections, but also as high performance triboelectric nanogenerator (TENG) coupled with both solid-solid and gas-solid contact electrifications (CE). The repeatedly loading-unloading tests with 20 000 cycles exhibit its high and ultrastable piezoresistive sensor performances. Moreover, when the obtained aerogel is used as the electrode of a TENG, high electric output performance is produced due to the synergistic effect of solid-solid, and gas-solid interface CEs (3D electrification: solid-solid interface CE between the two solid electrification layers; gas-solid interface CE between the inner surface of GO/CNT HA and the air filled in the aerogel pores). This kind of aerogel promises good applications for human physiological/motion monitoring and energy harvest/supply in flexible/wearable electronics such as piezoresistive sensors and flexible TENG.

Flexible GaN-based microscale light-emitting diodes with a batch transfer by wet etching.

Flexible inorganic GaN-based microscale light-emitting diodes (µLEDs) show potential applications in wearable electronics, biomedical engineering, and human-machine interfaces. However, developing cost-effective products remains a challenge for flexible GaN-based µLEDs. Here, a facile and stable method is proposed to fabricate flexible GaN-based µLEDs from silicon substrates in an array-scale manner by wet etching. Circular and square µLED arrays with a size and pitch of 500 µm were fabricated and then transferred to a flexible acrylic/copper substrate. The as-fabricated flexible µLEDs can maintain their structure intact while exhibiting a significant increase in external quantum efficiency. This Letter promotes the application of simple and low-cost flexible µLED devices, especially for virtual displays, wearables, and curvilinear displays.

Enhanced Photoluminescence of Flexible InGaN/GaN Multiple Quantum Wells on Fabric by Piezo-Phototronic Effect.

Fabric-based wearable electronics are showing advantages in emerging applications in wearable devices, Internet of everything, and artificial intelligence. Compared to the one with organic materials, devices based on inorganic semiconductors (e.g., GaN) commonly show advantages of superior characteristics and high stability. Upon the transfer of GaN-based heterogeneous films from their rigid substrates onto flexible/fabric substrates, changes in strain would influence the device performance. Here, we demonstrate the transfer of InGaN/GaN multiple quantum well (MQW) films onto flexible/fabric substrates with an effective lift-off technique. The physical properties of the InGaN/GaN MQWs film are characterized by atomic force microscopy and high-resolution X-ray diffraction, indicating that the transferred film does not suffer from huge damage. Excellent flexible properties are observed in the film transferred on fabric, and the photoluminescence (PL) intensity is enhanced by the piezo-phototronic effect, which shows an increase of about 10% by applying an external strain with increasing the film curvature to 6.25 mm-1. Moreover, energy band diagrams of the GaN/InGaN/GaN heterojunction at different strains are illustrated to clarify the internal modulation mechanism by the piezo-phototronic effect. This work would facilitate the guidance of constructing high-performance devices on fabrics and also push forward the rapid development of flexible and wearable electronics.