On the nature of decoherence in quantum circuits: Revealing the structural motif of the surface radicals in α-Al2O3.

Quantum information technology puts stringent demands on the quality of materials and interfaces in the pursuit of increased device coherence. Yet, little is known about the chemical structure and origins of paramagnetic impurities that produce flux/charge noise that causes decoherence of fragile quantum states and impedes the progress toward large-scale quantum computing. Here, we perform high magnetic field electron paramagnetic resonance (HFEPR) and hyperfine multispin spectroscopy on α-Al2O3, a common substrate for quantum devices. In its amorphous form, α-Al2O3 is also unavoidably present in aluminum-based superconducting circuits and qubits. The detected paramagnetic centers are immanent to the surface and have a well-defined but highly complex structure that extends over multiple hydrogen, aluminum, and oxygen atoms. Modeling reveals that the radicals likely originate from well-known reactive oxygen chemistry common to many metal oxides. We discuss how EPR spectroscopy might benefit the search for surface passivation and decoherence mitigation strategies.

Pulsed electron spin resonance of an organic microcrystal by dispersive readout.

We establish a testbed system for the development of high-sensitivity Electron Spin Resonance (ESR) techniques for small samples at cryogenic temperatures. Our system consists of a NbN thin-film planar superconducting microresonator designed to have a concentrated mode volume to couple to a small amount of paramagnetic material, and to be resilient to magnetic fields of up to 400mT. At 65mK we measure high-cooperativity coupling (C≈19) to an organic radical microcrystal containing 1012 spins in a pico-litre volume. We detect the spin-lattice decoherence rate via the dispersive frequency shift of the resonator. Techniques such as these could be suitable for applications in quantum information as well as for pulsed ESR interrogation of very few spins to provide insights into the surface chemistry of, for example, the material defects in superconducting quantum processors.

Sleep Disorders and Headache: A Review of Correlation and Mutual Influence.

The review is devoted to the complex relationship between headache and sleep disorders. The shared neuroanatomical structures of the nervous system involved in pain perception and sleep are shown, and mechanisms of comorbidity between headaches and sleep disorders are considered. Various types of headaches in the continuum of the sleep-wake cycle are described. Both pharmacological and non-pharmacological approaches to treatment are examined in detail, with the biochemical basis of the drug action.

Interdisciplinary approach to chronic pain management.

Chronic pain is a significant and costly problem all over the world. Despite significant progress in identifying the best treatment approaches, there are still significant obstacles that must be overcome in order for the treatment to be truly beneficial. There is evidence to support the cost-effectiveness of interdisciplinary treatment programs for patients with chronic pain. Creating an interdisciplinary service is not easy and certainly is much more complicated than simply placing different services in one clinic. However, when such interdisciplinary programs are instituted, they increase the effectiveness of chronic pain management significantly; bring satisfaction to doctors and are economically attractive (interdisciplinary treatment programs for patients suffering from pain not only provide the best clinical treatment, but are also the most cost-effective in the long run).

Small Al cluster ion implantation into Si and 4H-SiC.

RATIONALE: Continuously downscaling integrated circuit devices requires fabrication of shallower p-n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. METHODS: In this study to carry out low-energy implantation into single crystalline silicon and 4H-SiC samples we employ Aln - (n = 1-5) clusters with energy in the range of 5-20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time-of-flight secondary ion mass spectrometry (TOF-SIMS; IONTOF TOF.SIMS-5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. RESULTS: A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. CONCLUSIONS: The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF-SIMS depth profiling of the shallow cluster implantation is feasible.

Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants.

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC-achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)-proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm2 V-1 s-1 at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials.

Tolerability of the COX-1/COX-2 inhibitor lornoxicam in the treatment of acute and rheumatic pain.

AIM: To assess the safety of lornoxicam with particular focus on gastrointestinal (GI) events. METHODS: Data on adverse drug reactions (ADRs) were pooled from 60 comparative studies of lornoxicam. RESULTS: A total of 6420 patients received lornoxicam, 1192 received placebo and 3770 received a comparator analgesic. ADRs were reported by 21% of lornoxicam-treated patients, with GI events the most frequent (14 vs 8% with placebo). Across 15 studies that compared lornoxicam (n = 1287) with another NSAID (n = 1010), there was a reduced risk of a GI ADR with lornoxicam (0.78 [95% CI: 0.64-0.96]; p = 0.017). CONCLUSION: Lornoxicam was well tolerated with the type of GI events observed consistent with the known safety profile of NSAIDs.

Express optical analysis of epitaxial graphene on SiC: impact of morphology on quantum transport.

We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.

Nanoelectromechanical switch operating by tunneling of an entire C60 molecule.

We present a solid state single molecule electronic device where switching between two states with different conductance happens predominantly by tunneling of an entire C60 molecule. This conclusion is based on a novel statistical analysis of approximately 10(5) switching events. The analysis yields (i) the relative contribution of tunneling, current induced heating and thermal fluctuations to the switching mechanism, (ii) the voltage dependent energy barrier (approximately 100-200 meV) separating the two states of the switch and (iii) the switching attempt frequency, omega0, corresponding to a 2.8 meV mode, which is most likely rotational.

Electronic transport in single molecule junctions: control of the molecule-electrode coupling through intramolecular tunneling barriers.

We report on single molecule electron transport measurements of two oligophenylenevinylene (OPV3) derivatives placed in a nanogap between gold (Au) or lead (Pb) electrodes in a field effect transistor device. Both derivatives contain thiol end groups that allow chemical binding to the electrodes. One derivative has additional methylene groups separating the thiols from the delocalized pi-electron system. The insertion of methylene groups changes the open state conductance by 3-4 orders of magnitude and changes the transport mechanism from a coherent regime with finite zero-bias conductance to sequential tunneling and Coulomb blockade behavior.

Electron transfer dynamics of bistable single-molecule junctions.

We present transport measurements of single-molecule junctions bridged by a molecule with three benzene rings connected by two double bonds and with thiol end-groups that allow chemical binding to gold electrodes. The I-V curves show switching behavior between two distinct states. By statistical analysis of the switching events, we show that a 300 meV mode mediates the transition between the two states. We propose that breaking and reformation of a S-H bond in the contact zone between molecule and electrode explains the observed bistability.

Strong electronic coupling between single C60 molecules and gold electrodes prepared by quench condensation at 4 K. A single molecule three terminal device study.

We report the first measurements of single C60 molecules trapped in three terminal devices prepared by quench condensation of a gold source and drain electrode on top of an aluminium gate electrode covered with a thin oxide. Our experimental platform allows source and drain electrodes to be fabricated on the gate oxide at low temperatures and high vacuum. In a subsequent step, single molecules are evaporated in situ onto the surface and caught in the gap between a source and a drain electrode. This fabrication method ensures a clean contact between the molecule and the gold electrode due to the unbroken vacuum. Our measurements reveal a strong interaction between the C60 molecule and the gold electrodes resulting in the absence of the Coulomb blockade effects observed by others. In addition, we observe an insignificant gate dependence but a pronounced negative differential resistance (NDR) at bias voltages from 20-50 meV. The position of the peak in the NDR shows a pronounced and universal temperature dependence for all six devices included in the study. The results are related to previous measurements in such devices which focus on the detailed nature of the contact region between the molecule the gold electrode.

Single-electron transistor of a single organic molecule with access to several redox states.

A combination of classical Coulomb charging, electronic level spacings, spin, and vibrational modes determines the single-electron transfer reactions through nanoscale systems connected to external electrodes by tunnelling barriers. Coulomb charging effects have been shown to dominate such transport in semiconductor quantum dots, metallic and semiconducting nanoparticles, carbon nanotubes, and single molecules. Recently, transport has been shown to be also influenced by spin--through the Kondo effect--for both nanotubes and single molecules, as well as by vibrational fine structure. Here we describe a single-electron transistor where the electronic levels of a single pi-conjugated molecule in several distinct charged states control the transport properties. The molecular electronic levels extracted from the single-electron-transistor measurements are strongly perturbed compared to those of the molecule in solution, leading to a very significant reduction of the gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. We suggest, and verify by simple model calculations, that this surprising effect could be caused by image charges generated in the source and drain electrodes resulting in a strong localization of the charges on the molecule.