Crystal structure of monoclinic hafnia (HfO2) revisited with synchrotron X-ray, neutron diffraction and first-principles calculations.

A study on the crystal structure of monoclinic HfO2 has been performed using synchrotron X-ray and neutron diffraction data separately, as well as a combination of both. The precision of the structural parameters increases significantly due to application of the neutron diffraction technique. The experimental oxygen positions in HfO2, derived precisely, are visualized only by semi-local density functional calculations in terms of the calculated electronic band gap, but are not captured as accurately by using hybrid functionals.

An in situ trap capacitance measurement and ion-trapping detection scheme for a Penning ion trap facility.

This paper presents the design and implementation of an in situ measurement setup for the capacitance of a five electrode Penning ion trap (PIT) facility at room temperature. For implementing a high Q resonant circuit for the detection of trapped electrons/ions in a PIT, the value of the capacitance of the trap assembly is of prime importance. A tunable Colpitts oscillator followed by a unity gain buffer and a low pass filter is designed and successfully implemented for a two-fold purpose: in situ measurement of the trap capacitance when the electric and magnetic fields are turned off and also providing RF power at the desired frequency to the PIT for exciting the trapped ions and subsequent detection. The setup is tested for the in situ measurement of trap capacitance at room temperature and the results are found to comply with those obtained from measurements using a high Q parallel resonant circuit setup driven by a standard RF signal generator. The Colpitts oscillator is also tested successfully for supplying RF power to the high Q resonant circuit, which is required for the detection of trapped electrons/ions.

An improved model to predict bandwidth enhancement in an inductively tuned common source amplifier.

This paper presents an improved model for the prediction of bandwidth enhancement factor (BWEF) in an inductively tuned common source amplifier. In this model, we have included the effect of drain-source channel resistance of field effect transistor along with load inductance and output capacitance on BWEF of the amplifier. A frequency domain analysis of the model is performed and a closed-form expression is derived for BWEF of the amplifier. A prototype common source amplifier is designed and tested. The BWEF of amplifier is obtained from the measured frequency response as a function of drain current and load inductance. In the present work, we have clearly demonstrated that inclusion of drain-source channel resistance in the proposed model helps to estimate the BWEF, which is accurate to less than 5% as compared to the measured results.