Enhanced photoconductivity of hybrid 2D-QD MoS2-AgInS2 structures.

This study describes the fabrication of hybrid two-dimensional (2D)-quantum dot (QD) MoS2-AgInS2 photoconductive devices through the mechanical pressing of a MoS2 flake onto an AgInS2 QD film. The devices exhibit an enhanced photoresponse at both continuous and modulated optical excitations, compared with the bare MoS2 or AgInS2 layer, due to the formation of a built-in electric field near the MoS2/AgInS2 interface. The continuous wave photoresponse is significantly higher due to the effective photoconductive gain when electrons flow freely through the MoS2 flake, whereas holes are effectively trapped in AgInS2 QDs. The study highlights the potential of hybrid 2D-QD MoS2-AgInS2 devices for photovoltaic and optoelectronic applications.

Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening.

Metamorphic InAs/In0.15Ga0.85As and InAs/In0.31Ga0.69As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 µm, respectively; however, for photonic applications of these nanostructures, the effect of levels related to defects still needs in-depth investigation. We have focused on the influence of electron traps of defects on photocurrent (PC) in the plane of the QD array, studying by PC and deep level thermally stimulated current spectroscopy together with HRTEM and theoretical modeling. In the structures, a rich spectrum of electron trap levels of point defects EL6 (E c - 0.37 eV), EL7 (0.29-0.30 eV), EL8 (0.27 eV), EL9/M2 (0.22-0.23 eV), EL10/M1 (0.16 eV), M0 (∼0.11 eV) and three extended defects ED1/EL3 (0.52-0.54), ED2/EL4 (0.47-0.48 eV), ED3/EL5 (0.42-0.43 eV) has been identified. Among them, new defect levels undiscovered earlier in InAs/InGaAs nanostructures has been detected, in particular, EL8 and M0. The found electron traps are shown to affect a time-dependent PC at low temperatures. Besides a long-term kinetics due to trap charging, a prolonged PC decrement versus time is measured under constant illumination. The decrement is interpreted to be related to a Coulomb screening of the conductivity channel by the electrons captured in the QD interface traps. The decrement is well fitted by allometric exponents, which means many types of traps involved in electron capturing. This study provides new findings into the mechanism of in-plane PC of QD arrays, showing a crucial importance of growth-related defects on photoresponsivity at low temperatures.

Optical windows for head tissues in near-infrared and short-wave infrared regions: Approaching transcranial light applications.

Optical properties of the rat head tissues (brain cortex, cranial bone and scalp skin) are assessed, aiming at transcranial light applications such as optical imaging and phototherapy. The spectral measurements are carried out over the wide spectral range of 350 to 2800 nm, involving visible, near-infrared (NIR) and short-wave infrared (SWIR) regions. Four tissue transparency windows are considered: ~700 to 1000 nm (NIR-I), ~1000 to 1350 nm (NIR-II), ~1550 to 1870 nm (NIR-III or SWIR) and ~2100 to 2300 nm (SWIR-II). The values of attenuation coefficient and total attenuation length are determined for all windows and tissue types. The spectra indicate transmittance peaks in NIR, NIR-II and SWIR-II, with maximum tissue permeability for SWIR light. The use of SWIR-II window for the transcranial light applications is substantiated. Furthermore, absorbance of the head tissues is investigated in details, by defining and describing the characteristic absorption peaks in NIR-SWIR.

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3-1.55-µm Window.

Photoelectric properties of the metamorphic InAs/In x Ga1 - xAs quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In x Ga1 - xAs cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 µm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 µm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices.