Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering.

In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2. Facet coarsening takes place at further higher fluences. This transition from ripples to faceted structures is attributed to the shadowing effect due to a height difference between peaks and valleys of the ripples. The observed facet coarsening is attributed to a mechanism based on reflection of primary ions from the facets. In addition, the role of sputtering is investigated (for both the angles) by computing the fractional change in sputtering yield and the evolution of surface roughness. PACS: 81.05.Cy, 81.16.Rf, 61.80.Jh, 87.64.Dz.

Ripple formation on silicon by medium energy ion bombardment.

The formation of a self-organized nanoscale ripple pattern after off-normally incident ion bombardment on the surface of amorphous materials, or on semiconductors like silicon that are easily amorphized by ion bombardment, has attracted much attention in recent years from the point of view of both theory and applications. As the energy of the impinging ions increases from low to medium, i.e. several hundred eV to a few tens of keV, the ratio of amplitude to wavelength of the generated ripple pattern becomes so large that inter-peak shadowing of the incident ion flux takes place. Morphologically, the sinusoidal surface profile starts to become distorted after prolonged ion bombardment under such conditions. Structural and compositional modifications of the ripple morphology generated under shadowing conditions include the formation of a thicker amorphous layer with high incorporation of argon atoms in the form of nanometer sized bubbles around the middle part of the front slope of the ripple facing the ion beam, as compared to the rear slope. The present paper reviews recent developments in the experimental study of morphological, structural and compositional aspects of ripple patterns generated on a silicon surface after medium keV (30-120 keV) argon bombardment mainly at an angle of ion incidence of 60°.