Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties.

Recent advances in atomically thin two dimensional (2D) anisotropic group IVA -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10-3 A W-1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.

Nanofabrication of normally-off GaN vertical nanowire MESFETs.

Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a Schottky barrier gate (V-NW MESFETs), were fabricated for the first time. A nanofabrication process with comprehensive description of all processing steps is reported. It was validated with the demonstration of GaN V-NW MESFETs consisting of an array of 900 (30 × 30) GaN NWs with the narrowest until now reported diameter of 100 nm and all-around gate length of 250 nm. The GaN NWs were formed by a top-down approach, which combines conventional nanopatterning techniques and anisotropic wet etching of an initial GaN epilayer, grown by plasma assisted molecular beam epitaxy on a sapphire (0001) substrate. DC I-V characteristics exhibited normally-off operation and threshold voltage of +0.4 V, due to electron depletion region from the all-around Schottky barrier. A maximum drain-source current density (J ds) of 330 A cm-2 and maximum transconductance (g m) of 285 S cm-2 were obtained from I-V measurements. The results and directions for further optimization were discussed.

An exciton-polariton bolometer for terahertz radiation detection.

We experimentally investigate the feasibility of a bolometric device based on exciton-polaritons. Initial measurements presented in this work show that heating - via thermal expansion and bandgap renormalization - modifies the exciton-polariton propagation wavevector making exciton-polaritons propagation remarkably sensitive to thermal variations. By theoretical simulations we predict that using a single layer graphene absorbing layer, a THz bolometric sensor can be realized by a simple exciton-polariton ring interferometer device. The predicted sensitivity is comparable to presently existing THz bolometric devices with the convenience of being a device that inherently produces an optical signal output.

Optical Investigation of Monolayer and Bulk Tungsten Diselenide (WSe2) in High Magnetic Fields.

Optical spectroscopy in high magnetic fields B ≤ 65 T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe2, the exciton emission shifts linearly with the magnetic field and exhibits a splitting that originates from the magnetic field induced valley splitting. The monolayer data can be described using a single particle picture with a Dirac-like Hamiltonian for massive Dirac Fermions, with an additional term to phenomenologically include the valley splitting. In contrast, in bulk WSe2 where the inversion symmetry is restored, transmission measurements show a distinctly excitonic behavior with absorption to the 1s and 2s states. Magnetic field induces a spin splitting together with a small diamagnetic shift and cyclotron like behavior at high fields, which is best described within the hydrogen model.