RESUMO
We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity.
RESUMO
We derive expressions for the loaded gain and carrier-induced refractive-index change for a semiconductor gain medium. Our main conclusion is that the loaded gain and the loaded carrier-induced refractive-index change saturate differently, with the index being a much weaker function of the laser flux. This has important implications for the laser mode structure above threshold and is particularly important for filamentation suppression and stability in numerical modeling studies of gain-guided structures.
RESUMO
Phase conjugation by degenerate four-wave mixing in the 4-microm region in germanium has been observed for both single-line and multiline radiation. By using single-line output of a DF laser at 3.8 microm, X3 has been measured to be 4 X 10(-1) esu. Phase conjugation of multiline laser output has been achieved with an efficiency of 0.03%, a level that is consistent with the susceptibility found for single-line phase conjugation and the assumption of independent conjugation of each line of the multiline output.
