Strain Measurement in Single Crystals by 4D-ED.

A new method is presented to measure strain over a large area of a single crystal. The 4D-ED data are collected by recording a 2D diffraction pattern at each position in the 2D area of the TEM lamella scanned by the electron beam of STEM. Data processing is completed with a new computer program (available free of charge) that runs under the Windows operating system. Previously published similar methods are either commercial or need special hardware (electron holography) or are based on HRTEM, which involves limitations with respect to the size of the field of view. All these limitations are overcome by our approach. The presence of defects results in small local changes in orientation that change the subset of experimentally available diffraction spots in the individual patterns. Our method is based on a new principle, namely fitting a lattice to (a subset of) measured diffraction spots to improve the precision of the measurement. Although a spot to be measured may be missing in some of the patterns even the missing spot can be precisely measured by the lattice determined from the available spots. Application is exemplified by heavily boron-doped silicon with intended usage as a low-temperature superconductor in qubits.

Tunable High Speed Atomic Rotor in Bi2Se3 Revealed by Current Noise.

The ability to manipulate individual atoms and molecules using a scanning tunneling microscope (STM) has been crucial for the development of a vast array of atomic-scale devices and structures ranging from nanoscale motors and switches to quantum corrals. Molecular motors in particular have attracted considerable attention in view of their potential for assembly into complex nanoscale machines. Whereas the manipulated atoms or molecules are usually on top of a substrate, motors embedded in a lattice can be very beneficial for bottom-up construction, and may additionally be used to probe the influence of the lattice on the electronic properties of the host material. Here, we present the discovery of controlled manipulation of a rotor in Fe doped Bi2Se3. We find that the current into the rotor, which can be finely tuned with the voltage, drives omni-directional switching between three equivalent orientations, each of which can be frozen in at small bias voltage. Using current fluctuation measurements at 1 MHz and model simulations, we estimate that switching rates of hundreds of kHz for sub-nanoampere currents are achieved.