Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laser.

We report unprecedentedly high output powers measured from large area two-dimensional square-lattice photonic-crystal band-edge lasers (BELs), patterned by holographic lithography. In order to ensure mechanical rigidity, the BELs were fabricated in an InP-based epilayer bonded onto a fused silica substrate beforehand. The BEL devices, employing the surface-emitting Γ-point monopole band-edge mode, provide a fiber-coupled single mode output power as high as 2.6 mW and an external differential quantum efficiency of ~4%. The results of a three-dimensional finite-difference time-domain simulation agree with the experimental observation that the large BELs are beneficial for achieving both high power output and high differential quantum efficiency.

Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous "2.5 D" Photonic Crystal.

The authors report on the design, fabrication and operation of heterogeneous and compact "2.5 D" Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO(2) bonding layer, and a bottom high index contrast Si/SiO(2) Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5 microm, was achieved by photopumping. A low effective threshold, on the order of 350 microW, and a spontaneous emission factor, over 0.13, could be deduced from experiments.

Coupling analysis of heterogeneous integrated InP based photonic crystal triangular lattice band-edge lasers and silicon waveguides.

In recent years, many groups have envisioned the possibility of integrating optical and electronic devices in a single chip. In this paper, we study the integration of a photonic crystal laser fabricated in InP with a silicon passive waveguide. The coupling of energy between a 2D photonic crystal (PhC) triangular lattice band-edge laser and waveguide positioned underneath is analyzed in this paper. We show that a 40% coupling could be achieved provided the distance between the laser and the waveguide is carefully adjusted. A general description of the fabrication process used to realize these devices is also included in this paper.