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1.
Structural model for the metal-induced Si(111)3 x 1 reconstruction.
Weitering HH; DiNardo NJ; Pérez-Sandoz R; Chen J; Mele EJ.
Phys Rev B Condens Matter ; 49(23): 16837-16840, 1994 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-10010858
2.
Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110).
McIlroy DN; Heskett D; McLean AB; Ludeke R; Munekata H; DiNardo NJ.
Phys Rev B Condens Matter ; 48(16): 11897-11904, 1993 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-10007531
3.
Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces.
Weitering HH; Chen J; DiNardo NJ; Plummer EW.
Phys Rev B Condens Matter ; 48(11): 8119-8135, 1993 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-10007002
4.
K/GaAs(110) interface: Initial stages of growth and the semiconductor-to-metal transition.
Ventrice CA; DiNardo NJ.
Phys Rev B Condens Matter ; 47(11): 6470-6479, 1993 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-10004615
5.
Occupied surface-state bands of Bi(1 x 1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy.
McIlroy DN; Heskett D; Swanston DM; McLean AB; Ludeke R; Munekata H; Prietsch M; DiNardo NJ.
Phys Rev B Condens Matter ; 47(7): 3751-3759, 1993 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-10006478
6.
Potassium-induced unrelaxation of the GaAs(110) surface.
Ventrice CA; DiNardo NJ.
Phys Rev B Condens Matter ; 43(17): 14313-14316, 1991 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9997318
7.
Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110).
DiNardo NJ; Wong TM; Plummer EW.
Phys Rev Lett ; 65(17): 2177-2180, 1990 Oct 22.
Artigo em Inglês | MEDLINE | ID: mdl-10042473
8.
Comment on "Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)"
McLean AB; Heskett D; Tang D; DiNardo NJ.
Phys Rev Lett ; 65(4): 524, 1990 Jul 23.
Artigo em Inglês | MEDLINE | ID: mdl-10042942
9.
Cs-induced surface state on GaAs(110).
Maeda Wong T; DiNardo NJ; Heskett D; Plummer EW.
Phys Rev B Condens Matter ; 41(17): 12342-12345, 1990 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9993704
10.
Polarization dependence of Si(111)-2 x 1 surface-phonon and surface-state excitations.
DiNardo NJ; Thompson WA; Schell-Sorokin AJ; Demuth JE.
Phys Rev B Condens Matter ; 34(4): 3007-3010, 1986 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9940026
11.
Photoemission-based photovoltage probe of semiconductor surface and interface electronic structure.
Demuth JE; Thompson WJ; DiNardo NJ; Imbihl R.
Phys Rev Lett ; 56(13): 1408-1411, 1986 Mar 31.
Artigo em Inglês | MEDLINE | ID: mdl-10032660
12.
Temperature-dependent electronic excitations of the Si(111)2 x 1 surface.
DiNardo NJ; Demuth JE; Thompson WA; Avouris P.
Phys Rev B Condens Matter ; 31(6): 4077-4079, 1985 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-9936326
13.
H2O-derived contamination of cleaved Si(111)-2 x 1 surfaces.
Demuth JE; DiNardo NJ; Thompson WA.
Phys Rev B Condens Matter ; 31(2): 1130-1132, 1985 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-9935864
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