RESUMO
We demonstrate a method for measuring the H2 produced in water from the 10B(n,α)7Li fission reaction. Low energy neutrons from the NIST Center for Neutron Research interact with borate-containing water in a temperature-controlled high pressure cell made from titanium. After exposure for one to several hours, the water is extracted and sparged with argon. H2 entrained in the sparging gas is sampled with a small mass spectrometer. To determine the neutron exposure, a small amount of sodium is included in the borate solution. The water is collected and 24Na activation is measured in a counting apparatus on the following day. The G-value for H2 at room temperature is found to be (1.18 ± 0.10) molecules H2/100eV, in good agreement with previous estimates and recent modeling calculations.
RESUMO
In order to test the effectiveness of oxalate-based polymeric adsorbents in the recovery of uranium from seawater, diallyl oxalate (DAOx) was grafted onto nylon 6 fabrics by exposing the fabric, immersed in pure liquid DAOx or in a surfactant-stabilized dispersion of DAOx in water, to electron beam or gamma radiation. Following drying and weighing to determine the degree of grafting (DoG), the presence of oxalate in the fabrics was verified using XPS. Zeta potential measurements showed the fabric surfaces to be negatively charged. The fabrics were tested by rotating them for 7 days in a rotary agitator with actual seawater spiked with 0.2 or 1.0 mgâL-1 uranium. The fraction of uranium in the solution which was removed due to uptake on the fabrics was found to rise with increasing DoG at both uranium concentrations. EDS measurements were used to map the distribution of adsorbed uranium on the polymeric fibers.
RESUMO
Solution processing of photovoltaic semiconducting layers offers the potential for drastic cost reduction through improved materials utilization and high device throughput. One compelling solution-based processing strategy utilizes semiconductor layers produced by sintering nanocrystals into large-grain semiconductors at relatively low temperatures. Using n-ZnO/p-CdTe as a model system, we fabricate sintered CdTe nanocrystal solar cells processed at 350 °C with power conversion efficiencies (PCE) as high as 12.3%. JSC of over 25 mA cm(-2) are achieved, which are comparable or higher than those achieved using traditional, close-space sublimated CdTe. We find that the VOC can be substantially increased by applying forward bias for short periods of time. Capacitance measurements as well as intensity- and temperature-dependent analysis indicate that the increased VOC is likely due to relaxation of an energetic barrier at the ITO/CdTe interface.
