Tuning Electrode Work Function and Surface Energy for Solution Shearing High-Performance Organic Field-Effect Transistors.

A bottom-contact organic field-effect transistor (OFET) is easily adaptable to the standard lithography process because the contact electrodes are deposited before the organic semiconductor (OSC). However, the low surface energy of bare electrodes limits utilizing solution-processed single-crystal OSCs. Additionally, the bare electrode usually leads to a significant charge injection barrier, owing to its relatively low work function (WF). Here, we simultaneously improved the surface energy and WF of gold electrodes by conducting oxygen plasma treatment to achieve high-performance OFET based on solution-processed organic single crystals. We cultivated a thin layer of gold oxide on Au electrodes to increase the WF by ∼0.7 eV. The surface energy of Au electrodes was enhanced to the same as AlOx dielectric surface, enabling the seamless growth of large-area C8-BTBT (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene) organic single-crystal thin films via solution shearing. This technique facilitates the production of high-performance OFETs with the highest carrier mobility of 6.7 cm2 V-1 s-1 and sharp switching characterized by a subthreshold swing of 63.6 mV dec-1. The bottom-contact OFETs exhibited a lower contact resistance of 1.19 kΩ cm than its F4-TCNQ-doped top-contact control device. This method offers a straightforward and effective strategy for producing high-quality single-crystal OFETs, which are potentially suitable for commercial applications.

Bi-polaron Transport and Magnetic Field Induced Pauli Spin Blockade in Redox-Active Molecular Junctions.

We report the bi-polaron transport and magnetic field induced Pauli spin-blockade in solid-state molecular junctions (MJs) evidenced by a positive magnetoresistance (MR). The junction was made of thin layers of redox-active ruthenium polypyridyl-oligomers Ru(tpy)2 sandwiched between conducting amorphous carbon (a-C) electrodes. The redox-active Ru(tpy)2 molecule, which enables small polaron and deep traps in the charge transport of the Ru(tpy)2 MJ as revealed by the temperature-dependent current-voltage response, leads to the formation of the bi-polaron and magnetic field induced Pauli spin blockade, resulting into the MR. At the meantime, the reliable and controllable device performance renders a rigid thickness-dependent MR evolution. The bi-polaron transport revealed in our study underscores the importance of the multi-particle transport by molecular design in MJs and laid the foundation for magnetic-electronic function in molecular-scale devices.

The development of a magnetic iron/nitrogen-doped graphitized carbon composite with boosted microwave attenuation ability as the wideband microwave absorber.

Magnetic carbon-based composites have been attractive candidates for electromagnetic (EM) absorption due to their dual magnetic and dielectric loss ability. In this study, a novel magnetic carbon consisting of N-doped graphitized carbon and magnetic Fe nanoparticles was produced. First, the graphitized carbon doped with N has been demonstrated to be an efficient way to strengthen the conductivity loss ability. Based on the N-doped graphitized carbon (NGC), the magnetic Fe nanoparticles were further decorated on the NGC, which was not only favored the dielectric loss ability but also introduced the magnetic loss ability. The electromagnetic absorbing properties of the NGC-Fe nanoparticles were evaluated in the frequency range of 2-18 GHz, and as expected, the sample exhibited the excellent wideband EM absorbing ability, with an effective absorption region of 5.2 GHz under a thickness of 1.2 mm. Ulilization of element doping method consisted to modify magnetic carbon material can be a candidate for producing wideband EM absorbers but showing thin thickness.