Photon management properties of Yb-doped SnO2 nanoparticles synthesized by the sol-gel technique.

SnO2 is a transparent large band gap semiconductor, particularly interesting for optoelectronic and photovoltaic devices, mainly because its conduction can be easily tuned by doping or by modulating the amount of oxygen vacancies. Besides, rare earth doping was successfully exploited for up conversion properties. Here we report on the functionalization of SnO2 nanoparticles with optically active Yb3+ ions using the sol-gel method, which allows UV to NIR spectral (down) conversion. As starting solutions we used stable non-alkoxide metal-organic compounds, which is rather uncommon. Transmission electron microscopy analysis demonstrated the formation of small well-crystallized nanoparticles while X-ray photoelectron spectroscopy measurements have revealed that the Yb is well inserted in the host matrix and has a 3+ valence state. All nanoparticles present large absorption in the UV-visible range (250 to 550 nm) and a band gap that decreases down to 2.72 eV upon doping. The UV energy converted into NIR on the basis of efficient energy transfer from SnO2 to the Yb3+ ions ranges between 250 and 400 nm. Reference undoped SnO2 nanoparticles with a mean size of 20 nm allow converting UV light into broad visible emission centered at 650 nm. The incorporation of up to 3.5 at% of Yb3+ ions into the SnO2 host matrix results in a spectacular decrease of the nanoparticle size down to 6.6 nm. This allowed also the shift of the photoluminescence to NIR in the 970-1050 nm range. The energy level structure of Yb3+ in SnO2 was successfully determined from the deconvolution of the Yb emission. This emission is significantly enhanced by increasing the doping level. All optical measurements suggest that these nanoparticles can be efficiently used as down-shifting converters.

Electrochemical synthesis of n-type ZnS layers on p-Cu2O/n-ZnO heterojunctions with different deposition temperatures.

Metal oxide p-n heterojunctions consisting of p-Cu2O/n-ZnO/n-ZnS nanostructures were deposited on an ITO substrate by three-step electrodeposition. The effect of ZnS layer deposition temperature on the properties of the heterojunction was investigated by different techniques. The Mott-Schottky analysis confirmed the n-type conductivity for ZnO and ZnS and p-type conductivity for the Cu2O layer, respectively. Also, it showed a decrease of ZnS donor concentration with increasing deposition temperature. The X-ray diffraction (XRD) analysis confirms a pure phase of hexagonal ZnO, cubic ZnS and cubic Cu2O structures, respectively. The heterojunction with ZnS deposited at 60 °C shows high crystallinity. The morphological measurements by scanning electron microscopy (SEM) indicate that the deposition temperature has a significant influence on the morphology of ZnO and the atomic force microscopy (AFM) images revealed the improvement of Cu2O morphology by increasing the ZnS deposition temperature. The UV-Vis response shows strong absorption in the visible region and the profile of optical absorption spectra changes with the ZnS deposition temperature. The current-voltage (I-V) characteristics of the Au/p-Cu2O/n-ZnO/n-ZnS/ITO heterojunction display well-defined rectifying behavior for the heterojunction with ZnS deposited at 60 °C.

Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling.

Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferroelectric-based solar cells.

Photon management properties of rare-earth (Nd,Yb,Sm)-doped CeO2 films prepared by pulsed laser deposition.

CeO2 is a promising material for applications in optoelectronics and photovoltaics due to its large band gap and values of the refractive index and lattice parameters, which are suitable for silicon-based devices. In this study, we show that trivalent Sm, Nd and Yb ions can be successfully inserted and optically activated in CeO2 films grown at a relatively low deposition temperature (400 °C), which is compatible with inorganic photovoltaics. CeO2 thin films can therefore be efficiently functionalized with photon-management properties by doping with trivalent rare earth (RE) ions. Structural and optical analyses provide details of the electronic level structure of the films and of their energy transfer mechanisms. In particular, we give evidence of the existence of an absorption band centered at 350 nm from which energy transfer to rare earth ions occurs. The transfer mechanisms can be completely explained only by considering the spontaneous migration of Ce(3+) ions in CeO2 at a short distance from the RE(3+) ions. The strong absorption cross section of the f-d transitions in Ce(3+) ions efficiently intercepts the UV photons of the solar spectrum and therefore strongly increases the potential of these layers as downshifters and downconverters.

Organosilicon coatings deposited in atmospheric pressure townsend discharge for gas barrier purpose: effect of substrate temperature on structure and properties.

Organosilicon plasma polymer and silicalike layers are deposited at different temperatures in a dielectric barrier discharge at atmospheric pressure operating in the Townsend regime. Final properties of these two kinds of layers can be finely tuned by the plasma process conditions. In particular, influence of deposition temperature is investigated when hexamethyldisiloxane based monolayers are deposited on poly(ethylene naphtalate) substrate. Coating chemical structure is tested by means of Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Their thickness, topography, and mechanical properties are evaluated by ellipsometry, scanning electron microscopy observation of coatings cross sections, atomic force microscopy, and nanoscratch testing. Permeability of coated polymer is measured for transparent silicalike layers, and the effect of coating structure on the oxygen gas permeability is discussed. The deposition temperature of coatings at 90 °C provides a strong improvement in barrier property compared to room temperature deposition, thanks to a densification of the SiO2 matrix and to a decrease in the silanol group content.

Enhanced adhesion over aluminum solid substrates by controlled atmospheric plasma deposition of amine-rich primers.

Controlled chemical modification of aluminum surface is carried by atmospheric plasma polymerization of allylamine. The amine-rich coatings are characterized and tested for their behavior as adhesion promoter. The adhesion strength of aluminum-epoxy assemblies is shown to increase according to primary amino group content and coating thickness, which in turn can be regulated by plasma power parameters, allowing tailoring the coating chemical properties. The increase in adherence can be correlated to the total and primary amino group contents in the film, indicating covalent bonding of epoxy groups to the primer as the basis of the mechanical improvement.

Effect of the nanometric scale thickness on the magnetization steps in Ca3Co2O6 thin films.

We report on the effect of the film thickness on the magnetic properties of Ca3Co2O6films with an emphasis on the magnetization steps usually observed in the M-H curves below 10 K. Films with thicknesses between 35 and 200 nm all present two magnetic transitions at about T(C1) = 22 K and T(C2) = 10 K, corresponding to a 3D long range ferrimagnetic order and the transition to the formation of a frozen spin state, respectively. The magnetization curves at 10 K exhibit the expected stepped variation. However, by decreasing the thickness below a critical value of about 60 nm, no magnetization plateau is observed when the M-H curve is recorded at 2 K. Moreover, an additional transition in the susceptibility curve is observed at 45 K. These changes can be attributed to the reduced coherence length of the propagation vector along and perpendicular to the chains, and are supported by the magnetization relaxation measurements which indicate a reduction of the relaxation time. These results are helpful for understanding the origin of the magnetization steps in the one-dimensional Ca3Co2O6 cobaltite and confront the theoretical models aimed at explaining the magnetic properties in this system.

Evidence of superparamagnetic co clusters in pulsed laser deposition-grown Zn0.9Co0.1O thin films using atom probe tomography.

Nanosized Co clusters (of about 3 nm size) were unambiguously identified in Co-doped ZnO thin films by atom probe tomography. These clusters are directly correlated to the superparamagnetic relaxation observed by ZFC/FC magnetization measurements. These analyses provide strong evidence that the room-temperature ferromagnetism observed in the magnetization curves cannot be attributed to the observed Co clusters. Because there is no experimental evidence of the presence of other secondary phases, our results reinforce the assumption of a defect-induced ferromagnetism in Co-doped ZnO diluted magnetic semiconductors.

Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering.

We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu(2+) and Eu(3+) into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn(2+) as Eu(2+) into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu(2)O(3) oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the (5)D(0)-->(7)F(2) Eu(3+) transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu(3+) ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films.