Ni/Zn ratio and La substitution effect on selected structural and magnetic properties of NiZn ferrites.

Auto-combustion process was used for synthetization of Ni1-xZnxFe2O4and Ni1-xZnxLa0.02Fe1.98O4(x= 0, 0.3, 0.5, 0.64 and 0.7) ferrite samples to investigate their structural and selected magnetic properties. Standard characterization method such as x-ray diffraction, magnetic susceptibility temperature dependencies measurement, low-frequency hysteresis loops recording and complex permeability spectra were used on the research samples. The monophasic ferrite compounds have been prepared. For all samples, with an increase of zinc ions in the content, a decrease of the Curie temperature and coercive field value and an increase of the complex permeability real part value were observed, together with a shift of the ferrimagnetic resonance frequency value to lower ones. Substituted samples showed some differences, such as slightly higher values of the Curie temperature and coercive field, and at the same time slightly lower values of the complex permeability real part and higher values of the ferrimagnetic resonance frequency.

Phase-Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films.

Different phases of Ga2O3 have been regarded as superior platforms for making new-generation high-performance electronic devices. However, understanding of thermal transport in different phases of nanoscale Ga2O3 thin-films remains challenging, owing to the lack of phonon transport models and systematic experimental investigations. Here, thermal conductivity (TC) and thermal boundary conductance (TBC) of the ( 1 ¯ 010 ) $( {\bar 1010} )$ α-, ( 2 ¯ 01 ) $( {\bar 201} )\;$ ß-, and (001) κ-Ga2O3 thin films on sapphire are investigated. At ≈80 nm, the measured TC of α (8.8 W m-1 K-1) is ≈1.8 times and ≈3.0 times larger than that of ß and κ, respectively, consistent with model based on density functional theory (DFT), whereas the model reveals a similar TC for the bulk α- and ß-Ga2O3. The observed phase- and size-dependence of TC is discussed thoroughly with phonon transport properties such as phonon mean free path and group velocity. The measured TBC at Ga2O3/sapphire interface is analyzed with diffuse mismatch model using DFT-derived full phonon dispersion relation. Phonon spectral distribution of density of states, transmission coefficients, and group velocity are studied to understand the phase-dependence of TBC. This study provides insight into the fundamental phonon transport mechanism in Ga2O3 thin films and paves the way for improved thermal management of high-power Ga2O3-based devices.

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm-2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics.

Lithium-Induced Reorientation of Few-Layer MoS2 Films.

Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.

Agronomic Investigation of Spray Dispersion of Metal-Based Nanoparticles on Sunflowers in Real-World Environments.

In environmental and agronomic settings, even minor imbalances can trigger a range of unpredicted responses. Despite the widespread use of metal-based nanoparticles (NPs) and new bio-nanofertilizers, their impact on crop production is absent in the literature. Therefore, our research is focused on the agronomic effect of spray application of gold nanoparticles anchored to SiO2 mesoporous silica (AuSi-NPs), zinc oxide nanoparticles (ZnO-NPs), and iron oxide nanoparticles (Fe3O4-NPs) on sunflowers under real-world environments. Our findings revealed that the biosynthetically prepared AuSi-NPs and ZnO-NPs were highly effective in enhancing sunflower seasonal physiology, e.g., the value of the NDVI index increased from 0.012 to 0.025 after AuSi-NPs application. The distribution of leaf trichomes improved and the grain yield increased from 2.47 t ha-1 to 3.29 t ha-1 after ZnO-NPs application. AuSi-NPs treatment resulted in a higher content of essential linoleic acid (54.37%) when compared to the NPs-free control (51.57%), which had a higher determined oleic acid. No NPs or residual translocated metals were detected in the fully ripe sunflower seeds, except for slightly higher silica content after the AuSi-NPs treatment. Additionally, AuSi-NPs and NPs-free control showed wide insect biodiversity while ZnO-NPs treatment had the lowest value of phosphorus as anti-nutrient. Contradictory but insignificant effect on physiology, yield, and insect biodiversity was observed in Fe3O4-NPs treatment. Therefore, further studies are needed to fully understand the long-term environmental and agricultural sustainability of NPs applications.

Mg Doping of N-Polar, In-Rich InAlN.

Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10-3. The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP2Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~1019 cm-3 were determined in all samples, with a minor compensation observed at a CP2Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm2/Vs of the undoped sample was reduced to ~6 and ~0.3 cm2/Vs with a CP2Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp2Mg flow.

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD.

In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10-25 nm) continuous layer of small conical pyramids in which large conical pyramids with an approximate height of 50-80 nm were randomly distributed. The large pyramids were grown above the edge-type dislocations which originated in the GaN buffer; the dislocations did not penetrate the large, isolated pyramids. The large pyramids were well crystallized and relaxed with a small quantity of defects, such as dislocations, preferentially located at the contact zones of adjacent pyramids. The low temperature (6.5 K) photoluminescence spectra showed one clear maximum at 853 meV with a full width at half maximum (FWHM) of 75 meV and 859 meV with a FWHM of 80 meV for the off-axis and on-axis samples, respectively.

The Effects of Nature-Inspired Synthesis on Silver Nanoparticle Generation.

A wide range of methods can be used for nature-inspired metallic nanoparticle (NP) synthesis. These syntheses, however, are ongoing in the presence of diverse mixtures of different chemical compounds, and all or only a few of these contribute to resultant particle properties. Herein, the linden (Tilia sp.) inflorescence leachate and pure citric and protocatechuic acids were chosen for Ag-AgCl nanoparticle (NP) synthesis, and the resultant particles were then compared. We focused on the following four issues: (1) preparation of Ag-AgCl NPs using the Tilia sp.-based phytosynthetic protocol, (2) analytical determination of the common phenolic, nonphenolic, and inorganic profiles of three Tilia sp. types from different harvesting locations, (3) preparation of Ag-AgCl NPs using a mixture of citric and protocatechuic acids based on chromatographic evaluation, and (4) comparison of Tilia-based and organic acid-based syntheses. Our research confirms that the Tilia organic and inorganic profiles in biomasses are influenced by the harvesting location, and the three sites influenced both the morphology and final NP size. Our processing method was uniform, and this enabled great Ag-AgCl NP reproducibility for each specific biomass. We were then able to prove that the simplified organic acid-based synthesis produced even smaller NPs than Tilia-based synthesis. These findings provide better understanding of the significant influence on NP final properties resulting from other organic acids contained in the linden.

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD.

We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roughness of ~1 nm were grown using gallium-tetramethylheptanedionate (Ga(thd)3) and tetraethyl orthosilicate (TEOS) as Ga and Si precursor, respectively, on c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε and κ-phase Ga2O3 using X-ray diffraction (XRD) φ-scan analysis or electron diffraction analysis using conventional TEM was investigated. It is shown that the hexagonal ε-phase can be unambiguously identified by XRD or TEM only in the case that the orthorhombic κ-phase is completely suppressed. Additionally, thermal stability of prepared ε/κ-Ga2O3 films was studied by in situ and ex situ XRD analysis and atomic force microscopy. The films were found to preserve their crystal structure at temperatures as high as 1100 °C for 5 min or annealing at 900 °C for 10 min in vacuum ambient (<1 mBar). Prolonged annealing at these temperatures led to partial transformation to ß-phase Ga2O3 and possible amorphization of the films.

GaAs Nanomembranes in the High Electron Mobility Transistor Technology.

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm-2 and Hall mobility of 4590 cm2V-1s-1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~-1.5% and ~-0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

Optical Characterization of Few-Layer PtSe2 Nanosheet Films.

Thin films of transition-metal dichalcogenides are potential materials for optoelectronic applications. However, the application of these materials in practice requires knowledge of their fundamental optical properties. Many existing methods determine optical constants using predefined models. Here, a different approach was used. We determine the sheet conductance and absorption coefficient of few-layer PtSe2 in the infrared and UV-vis ranges without recourse to any particular model for the optical constants. PtSe2 samples with a thickness of about 3-4 layers were prepared by selenization of 0.5 nm thick platinum films on sapphire substrates at different temperatures. Differential reflectance was extracted from transmittance and reflectance measurements from the front and back of the sample. The film thickness, limited to a few atomic layers, allowed a thin-film approximation to calculate the optical conductance and absorption coefficient. The former has a very different energy dependence in the infrared, near-infrared, and visible ranges. The absorption coefficient exhibits a strong power-law dependence on energy with an exponent larger than three in the mid-infrared and near-infrared regions. We have not observed any evidence for a band gap in PtSe2 thin layers down to an energy of 0.4 eV from our optical measurements.

Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio.

Recently, few-layer PtSe2 films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached the theoretically predicted values, especially with regard to carrier mobility. In addition, it is not yet known which growth parameters (if any) can experimentally affect the carrier mobility value. This work presents the fabrication of horizontally aligned PtSe2 films using one-zone selenization of pre-deposited platinum layers. We have identified the Se : Pt ratio as a parameter controlling the charge carrier mobility in the thin films. The mobility increases more than twice as the ratio changes in a narrow interval around a value of 2. A simultaneous reduction of the carrier concentration suggests that ionized impurity scattering is responsible for the observed mobility behaviour. This significant finding may help to better understand the transport properties of few-layer PtSe2 films.

Correction: Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio.

[This corrects the article DOI: 10.1039/D1RA04507E.].

Aspergillus niger Decreases Bioavailability of Arsenic(V) via Biotransformation of Manganese Oxide into Biogenic Oxalate Minerals.

The aim of this work was to evaluate the transformation of manganese oxide (hausmannite) by microscopic filamentous fungus Aspergillus niger and the effects of the transformation on mobility and bioavailability of arsenic. Our results showed that the A. niger strain CBS 140837 greatly affected the stability of hausmannite and induced its transformation into biogenic crystals of manganese oxalates-falottaite and lindbergite. The transformation was enabled by fungal acidolysis of hausmannite and subsequent release of manganese ions into the culture medium. While almost 45% of manganese was bioextracted, the arsenic content in manganese precipitates increased throughout the 25-day static cultivation of fungus. This significantly decreased the bioavailability of arsenic for the fungus. These results highlight the unique A. niger strain's ability to act as an active geochemical factor via its ability to acidify its environment and to induce formation of biogenic minerals. This affects not only the manganese speciation, but also bioaccumulation of potentially toxic metals and metalloids associated with manganese oxides, including arsenic.

Impact of Bulk ZnO, ZnO Nanoparticles and Dissolved Zn on Early Growth Stages of Barley-A Pot Experiment.

Zinc is among the most in-demand metals in the world which also means that a considerable amount of this element is released to the environment each year as a result of human activities. A pot experiment was conducted to study the impact of low- and high-dose zinc amendments on plant growth and biomass yield, with Calcic Chernozem as a growing medium and barley (Hordeum vulgare L.) as a model plant. The distribution of zinc in various plant parts was also investigated. Zn (II) was added in powder as bulk ZnO and in solution as ZnO nanoparticles and ZnSO4 in two dosages (3 and 30 mmol kg-1 soil) prior to planting. The plants were harvested after 10 days of growth. The three sets of data were taken under identical experimental conditions. The application of zinc in aqueous solution and in particulate form (having particle sizes in the range of <100 nm to >500 nm) at concentration of 3 and 30 mmol Zn kg-1 to the soil resulted in decreased growth (root length, shoot length) and biomass yield; the only exception was the addition of 30 mmol Zn kg-1 in the form of bulk ZnO, which had a positive effect on the root growth. The dry weight reduction (sprout biomass) was lowest in plants grown in soil treated with dissolved zinc. There were no statistically significant changes in the content of chlorophyll a, chlorophyll b, and total chlorophyll, although flame atomic absorption spectrometry (FAAS) analysis indicated that plants bioaccumulated the zinc applied. This implies that the transport of zinc into the above-ground plant parts is controlled by the presence of effective mechanical and physiological barriers in roots. Crop performance under zinc stress in relation to biomass production and the growth of roots and shoots is also partly a reflection of the effects of soil properties. Our findings emphasize the importance of considering plant-soil interactions in research of potential toxicity and bioavailability of zinc in the environment.

Assessment of Aspergillus niger Strain's Suitability for Arsenate-Contaminated Water Treatment and Adsorbent Recycling via Bioextraction in a Laboratory-Scale Experiment.

In this work, the viability of bioaccumulation and bioextraction processes for arsenic removal from contaminated waters, as well as the recycling of arsenate-treated amorphous ferric oxyhydroxide adsorbent (FeOOH) were evaluated using the common soil microscopic filamentous fungus Aspergillus niger. After treating the contaminated arsenate solution (100 mg As L-1) with FeOOH, the remaining solution was exposed to the growing fungus during a static 19-day cultivation period to further decrease the arsenic concentration. Our data indicated that although the FeOOH adsorbent is suitable for arsenate removal with up to 84% removal efficiency, the fungus was capable of accumulating only up to 13.2% of the remaining arsenic from the culture media. This shows that the fungus A. niger, although highly praised for its application in environmental biotechnology research, was insufficient for decreasing the arsenic contamination to an environmentally acceptable level. However, the bioextraction of arsenic from arsenate-treated FeOOH proved relatively effective for reuse of the adsorbent. Due to its production of acidic metabolites, which decreased pH below 2.7, the fungal strain was capable of removing of up to 98.2% of arsenic from the arsenate-treated FeOOH adsorbent.

Fungus Aspergillus niger Processes Exogenous Zinc Nanoparticles into a Biogenic Oxalate Mineral.

Zinc oxide nanoparticles (ZnO NPs) belong to the most widely used nanoparticles in both commercial products and industrial applications. Hence, they are frequently released into the environment. Soil fungi can affect the mobilization of zinc from ZnO NPs in soils, and thus they can heavily influence the mobility and bioavailability of zinc there. Therefore, ubiquitous soil fungus Aspergillus niger was selected as a test organism to evaluate the fungal interaction with ZnO NPs. As anticipated, the A. niger strain significantly affected the stability of particulate forms of ZnO due to the acidification of its environment. The influence of ZnO NPs on fungus was compared to the aqueous Zn cations and to bulk ZnO as well. Bulk ZnO had the least effect on fungal growth, while the response of A. niger to ZnO NPs was comparable with ionic zinc. Our results have shown that soil fungus can efficiently bioaccumulate Zn that was bioextracted from ZnO. Furthermore, it influences Zn bioavailability to plants by ZnO NPs transformation to stable biogenic minerals. Hence, a newly formed biogenic mineral phase of zinc oxalate was identified after the experiment with A. niger strain's extracellular metabolites highlighting the fungal significance in zinc biogeochemistry.

Partitioning and stability of ionic, nano- and microsized zinc in natural soil suspensions.

Batch experiments aimed at solid-liquid distribution of 40 nm engineered zinc oxide nanoparticles (ZnO-NP), microparticles (bulk ZnO), and ionic Zn in ZnSO4 solution were conducted on eight field soil samples of different characteristics to identify how the form of Zn affects its distribution in soil. The concentration of Zn in different size fractions present in supernatant solutions obtained from centrifuged soil suspensions was also measured. The distribution between a liquid and a solid was different for the ionic Zn (ZnSO4) and particulate Zn (ZnO-NP and bulk ZnO). In acidic soil solutions, the partitioning coefficient (KdA) of the ionic Zn was in range of 14.7-15.9 compared to 133.4-194.1 for ZnO-NP and bulk ZnO. The situation was reversed under alkaline conditions resulting in a decreased retention of particulate forms of Zn by the solids, with ZnO-NP showing KdA of 8.5-23.4 compared to 160.0-760.1 of ionic Zn. Soil pH thus appears to be the predominant factor influencing the solid-liquid distribution of Zn in different forms. Even the distribution of Zn in different size fractions is heavily affected by the soil pH, causing dissolution of ZnO-NP and bulk ZnO in acidic soils. In alkaline soils, applied ionic Zn (ZnSO4) remained dissolved. This study shows that ZnO-NP are the most mobile of the three tested forms of Zn in alkaline soils. This may affect the spatial distribution of Zn in soil and potentially increase the effectivity of the application of Zn fertilizer when in nanoparticle form.

Ag-AgCl Nanoparticles Fixation on Electrospun PVA Fibres: Technological Concept and Progress.

Polymer-metal based material with unique 3D structure is an attractive substrate for the development of biomedical applications. A novel preparation of the composite from polymer fibres and silver nanoparticles has been designed through: (1) preparation of silver nanoparticles by phytosynthesis and (2) incorporation of these nanoparticles in a fibrous membrane prepared by electrospinning. The nanoparticle biosynthesis was performed in a pure environmental-friendly, easy, static, bottom-up in vitro regime using Tilia sp. leachate. TEM and XRD depict the formation, stabilisation and encapsulation of crystalline silver (14 ± 9 nm) nanoparticles (NPs) in one simple step with low tendency to aggregate. We achieved successful incorporation in the uniform electrospun 221 ± 24 nm poly(vinylalcohol) fibres, and this confirms the possibility of its use in the biomedical field. Both SEM with EDX and TEM analysis determined fibre uniformity with the presence of silver NPs, and ICP-AES confirmed the relatively similar metal concentration throughout the triplicate measurement of fibre structures on the 2 × 2 cm area in the following manner: 0.303 ± 0.018 wt. %, 0.282 ± 0.017 wt. %, and 0.281 ± 0.017 wt. %. Our hypothesis is based on previously verified preparation of active silver NPs and the easily prepared PVA electrospun fibres which act as a water soluble matrix. The simple methodology of incorporating biosynthetically prepared NPs in the PVA fibers highlights the effectiveness of this material, with simple release from water-soluble PVA and final activation of the prepared NPs.

Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond.

The last few decades faced on the fabrication of advanced engineering materials involving also different composites. Here, we report on the fabrication of few-layer molybdenum disulfide on top of thin polycrystalline diamond substrates with a high specific surface area. In the method, pre-deposited molybdenum coatings were sulfurized in a one-zone furnace at ambient pressure. As-prepared MoS2 layers were characterized by several techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We found out that the initial thickness of Mo films determined the final c-axis crystallographic orientation of MoS2 layer as previously observed on other substrates. Even though it is well-known that Mo diffuses into diamond at elevated temperatures, the competing sulfurization applied effectively suppressed the diffusion and a chemical reaction between molybdenum and diamond. In particular, a Mo2C layer does not form at the interface between the Mo film and diamond substrate. The combination of diamond high specific surface area along with a controllable layer orientation might be attractive for applications, such as water splitting or water disinfection.