Crystallinity as a factor of SERS stability of silver nanoparticles formed by Ar+ irradiation.

The plasmonic sensors based on silver nanoparticles are limited in application due to their relatively fast degradation in the ambient atmosphere. The technology of ion-beam modification for the creation of monocrystalline silver nanoparticles (NPs) with stable plasmonic properties will expand the application of silver nanostructures. In the present study, highly-stable monocrystalline NPs were formed on the basis of a thin silver film by low-energy ion irradiation. Combined with lithography, this technique allows the creation of nanoparticle ensembles in variant forms. The characterization of the nanoparticles formed by ion-beam modification showed long-term outstanding for Ag nanoparticles stability of their plasmonic properties due to their monocrystalline structure. According to optical spectroscopy data, the reliable plasmonic properties in the ambient atmosphere are preserved for up to 39 days. The mapping of crystal violet dye via surface-enhanced Raman spectroscopy (SERS) revealed a strong amplification factor sustaining at least thrice as long as the one of similarly sized polycrystalline silver NPs formed by annealing. The plasmonic properties sustain more than a month of storage in the ambient atmosphere. Thus, ion-beam modification of silver film makes it possible to fabricate NPs with stable plasmonic properties and form clusters of NPs for sensor technology and SERS applications.

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS2 Films.

Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS2 and stable hexagonal 2H-MoS2 phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS2 films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS2 films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, Mo1-xRexS2 films with a 1T-MoS2 fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS2 phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.

Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3.

Atomically thin molybdenum disulfide (MoS2) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways of its synthesis is the sulfurization of preliminary grown oxide- or metallic film. However, despite apparent progress in this field, the electronic quality of the obtained MoS2 is inferior to that of exfoliated samples, making the detailed investigation of the sulfurized films' properties of great interest. In this work, we synthesized continuous MoS2 films with a thickness of ≈2.2 nm via the sulfurization of an atomic-layer-deposited MoO3 layer. X-ray photoelectron spectroscopy, transmission electron microscopy, and Raman spectroscopy indicated the appropriate chemical composition and microcrystalline structure of the obtained MoS2 films. The semiconductor quality of the synthesized films was confirmed by the fabrication of a field-effect transistor (FET) with an Ion/Ioff ratio of ≈40, which was limited primarily by the high contact resistance. The Schottky barrier height at the Au/MoS2 interface was found to be ≈1.2 eV indicating the necessity of careful contact engineering. Due to its simplicity and cost-effectiveness, such a technique of MoS2 synthesis still appears to be highly attractive for its applications in next-generation microelectronics. Therefore, further research of the electronic properties of films obtained via this technique is required.

Tribological Properties of WS2 Thin Films Containing Graphite-like Carbon and Ni Interlayers.

The development and production of thin-film coatings having very low friction is an urgent problem of materials science. One of the most promising solutions is the fabrication of special nanocomposites containing transition-metal dichalcogenides and various carbon-based nanophases. This study aims to explore the influence of graphite-like carbon (g-C) and Ni interface layers on the tribological properties of thin WS2 films. Nanocrystalline WS2 films were created by reactive pulsed laser deposition (PLD) in H2S at 500 °C. Between the two WS2 nanolayers, g-C and Ni nanofilms were fabricated by PLD at 700 and 22 °C, respectively. Tribotesting was carried out in a nitrogen-enriched atmosphere by the reciprocal sliding of a steel counterbody under a relatively low load of 1 N. For single-layer WS2 films, the friction coefficient was ~0.04. The application of g-C films did not noticeably improve the tribological properties of WS2-based films. However, the application of thin films of g-C and Ni reduced the friction coefficient to 0.013, thus, approaching superlubricity. The island morphology of the Ni nanofilm ensured WS2 retention and altered the contact area between the counterbody and the film surface. The catalytic properties of nickel facilitated the introduction of S and H atoms into g-C. The sliding of WS2 nanoplates against an amorphous g-C(S, H) nanolayer caused a lower coefficient of friction than the relative sliding of WS2 nanoplates. The detected behavior of the prepared thin films suggests a new strategy of designing antifriction coatings for practical applications and highlights the ample opportunities of laser techniques in the formation of promising thin-film coatings.

Optical Constants and Structural Properties of Epitaxial MoS2 Monolayers.

Two-dimensional layers of transition-metal dichalcogenides (TMDs) have been widely studied owing to their exciting potential for applications in advanced electronic and optoelectronic devices. Typically, monolayers of TMDs are produced either by mechanical exfoliation or chemical vapor deposition (CVD). While the former produces high-quality flakes with a size limited to a few micrometers, the latter gives large-area layers but with a nonuniform surface resulting from multiple defects and randomly oriented domains. The use of epitaxy growth can produce continuous, crystalline and uniform films with fewer defects. Here, we present a comprehensive study of the optical and structural properties of a single layer of MoS2 synthesized by molecular beam epitaxy (MBE) on a sapphire substrate. For optical characterization, we performed spectroscopic ellipsometry over a broad spectral range (from 250 to 1700 nm) under variable incident angles. The structural quality was assessed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman spectroscopy through which we were able to confirm that our sample contains a single-atomic layer of MoS2 with a low number of defects. Raman and photoluminescence spectroscopies revealed that MBE-synthesized MoS2 layers exhibit a two-times higher quantum yield of photoluminescence along with lower photobleaching compared to CVD-grown MoS2, thus making it an attractive candidate for photonic applications.

Optical Constants of Chemical Vapor Deposited Graphene for Photonic Applications.

Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report a comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene's optical properties on three different substrates for ultraviolet, visible, and near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions of additional nanometer-thick layers of water or other media. This issue is critical for practical applications since otherwise, these additional layers must be included in the design models of various graphene photonic, plasmonic, and optoelectronic devices. We observe a slight difference (not exceeding 5%) in the optical constants of graphene on different substrates. Further, the optical constants reported here are very close to those of graphite, which hints on their applicability to multilayer graphene structures. This work provides reliable data on monolayer graphene's optical properties, which should be useful for modeling and designing photonic devices with graphene.