Chemical vapor deposition of germanium-rich CrGe x nanowires.

Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGe x . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGe x coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6-7). The resistance of the nanowire-deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

An incommensurately modulated structure of η'-phase of Cu(3+x)Si determined by quantitative electron diffraction tomography.

The diffraction data of η'-Cu(3+x)(Si,Ge) were collected by 3D quantitative electron diffraction tomography on a submicrometer-sized sample, and the structure was solved by the charge-flipping algorithm in superspace. It is shown that the structure is trigonal, and it is incommensurately modulated with two modulation vectors q(1) = (α, α, 1/3) and q(2) = (-2α, α, 1/3), superspace group P31m(α, α, 1/3)000(-2α, α, 1/3)000. The modulation functions of some atoms are very complicated and reach amplitudes comparable with the unit cell dimensions. The modulated structure can be described as sheets of Cu clusters separated by honeycomb layers of mixed Si/Ge positions. The shape of the Cu clusters in the sheets strongly varies with the modulation phase, and the predominant form is an icosahedron. The striving of the Cu layers to form icosahedral clusters is deemed to be the main driving force of the modulation. The combination of methods used in this work can be applied to other structures that are difficult to crystallize in large crystals and opens new perspectives, especially for investigations of aperiodic or otherwise complex metallic alloys.

From shelled Ge nanowires to SiC nanotubes.

Shelled germanium nanowires up to 100 nm in diameter and several micrometers in length were prepared by low pressure chemical vapor deposition (LPCVD) of tris(trimethylsilyl)germane (SiMe(3))(3)GeH. Vapors of the precursor were deposited on tantalum substrates in an oven at 365 degrees C. Subsequently, the products were annealed at 700 degrees C in vacuum. The wires consist of a crystalline Ge core surrounded by a two-layer jacket. The presence of hexagonal Ge in the core was documented in some of the nanowires. The inner jacket is formed by amorphous germanium, the outer part by an Si/C material. By annealing at 900 degrees C, germanium in the core is expelled and nanotubes formed by the Si/C material remain. The samples were studied by SEM, HRTEM, EDX, FTIR and Raman spectroscopy, and the XRD technique.