Ion-beam assisted sputtering of titanium nitride thin films.

Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures [Formula: see text] as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting [Formula: see text] in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting [Formula: see text] due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

Coulomb barrier creation by means of electronic field emission in nanolayer capacitors.

The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping conductivity through the dielectric. Our main finding is that an application of a high electric field, ∼0.6-0.7 GV m-1, causes electrons to penetrate the dielectric. If the temperature is sufficiently low, such electrons become permanently trapped in the dielectric. To achieve a strong charging of the dielectric, the voltage needs to be high enough, so that a field emission occurs from the cathode into the dielectric. Such a strongly charged dielectric layer generates a Coulomb barrier and leads to a suppression of the leakage current. Thus, after the dielectric nanolayer of the capacitor is charged, the field emission and the hopping conductivity are both suppressed, and the hysteresis of the I-V curve disappears. The phenomenon is observed at temperatures up to ∼225 K. It would be advantageous to identify insulators in which the phenomenon of the Coulomb barriers persists even up to the room temperature, but at this time it is not known whether such dielectrics exist and/or can be designed.