RESUMO
The increasing demand for optics quality requires the lowest optical power loss, which can occur from unwanted reflections. Laser direct writing (LDW) allows for the fabrication of complex structures, which is particularly advantageous in micro-optic applications. This research demonstrates the possibility of forming an anti-reflective coating on hybrid polymer micro-lenses fabricated by employing LDW without changing their geometry. Such coating deposited via atomic layer deposition (ALD) decreased the reflection from 3.3% to 0.1% at a wavelength of 633 nm for one surface of hybrid organic-inorganic SZ2080™ material. This research validates the compatibility of ALD with LDW 3D multiphoton lithography synergistically, expanding its applications on optical grade sub-100 µm scale micro-optics.
RESUMO
Group III-V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm2 short-circuit current density. Device analysis identifies several routes to significantly improve the performance of the GaAsBi subcell and of the overall solar cell. This study is the first to report on multi-junctions incorporating GaAsBi and is an addition to the research on the use of bismuth-containing III-V alloys in photonic device applications.
