Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures.

Layered materials held together by weak interactions including van der Waals forces, such as graphite, have attracted interest for both technological applications and fundamental physics in their layered form and as an isolated single-layer. Only a few dozen single-layer van der Waals solids have been subject to considerable research focus, although there are likely to be many more that could have superior properties. To identify a broad spectrum of layered materials, we present a novel data mining algorithm that determines the dimensionality of weakly bonded subcomponents based on the atomic positions of bulk, three-dimensional crystal structures. By applying this algorithm to the Materials Project database of over 50,000 inorganic crystals, we identify 1173 two-dimensional layered materials and 487 materials that consist of weakly bonded one-dimensional molecular chains. This is an order of magnitude increase in the number of identified materials with most materials not known as two- or one-dimensional materials. Moreover, we discover 98 weakly bonded heterostructures of two-dimensional and one-dimensional subcomponents that are found within bulk materials, opening new possibilities for much-studied assembly of van der Waals heterostructures. Chemical families of materials, band gaps, and point groups for the materials identified in this work are presented. Point group and piezoelectricity in layered materials are also evaluated in single-layer forms. Three hundred and twenty-five of these materials are expected to have piezoelectric monolayers with a variety of forms of the piezoelectric tensor. This work significantly extends the scope of potential low-dimensional weakly bonded solids to be investigated.

Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport.

One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm(-1)) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under ∼1.5% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain.

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.

Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for Mo(x)W(1-x)Te2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices.

Structural Phase Transitions by Design in Monolayer Alloys.

Two-dimensional monolayer materials are a highly anomalous class of materials under vigorous exploration. Mo- and W-dichalcogenides are especially unusual two-dimensional materials because they exhibit at least three different monolayer crystal structures with strongly differing electronic properties. This intriguing yet poorly understood feature, which is not present in graphene, may support monolayer phase engineering, phase change memory and other applications. However, knowledge of the relevant phase boundaries and how to engineer them is lacking. Here we show using alloy models and state-of-the-art density functional theory calculations that alloyed MoTe2-WTe2 monolayers support structural phase transitions, with phase transition temperatures tunable over a large range from 0 to 933 K. We map temperature-composition phase diagrams of alloys between pure MoTe2 and pure WTe2, and benchmark our methods to analogous experiments on bulk materials. Our results suggest applications for two-dimensional materials as phase change materials that may provide scale, flexibility, and energy consumption advantages.

Dynamic Structural Response and Deformations of Monolayer MoS2 Visualized by Femtosecond Electron Diffraction.

Two-dimensional materials are subject to intrinsic and dynamic rippling that modulates their optoelectronic and electromechanical properties. Here, we directly visualize the dynamics of these processes within monolayer transition metal dichalcogenide MoS2 using femtosecond electron scattering techniques as a real-time probe with atomic-scale resolution. We show that optical excitation induces large-amplitude in-plane displacements and ultrafast wrinkling of the monolayer on nanometer length-scales, developing on picosecond time-scales. These deformations are associated with several percent peak strains that are fully reversible over tens of millions of cycles. Direct measurements of electron-phonon coupling times and the subsequent interfacial thermal heat flow between the monolayer and substrate are also obtained. These measurements, coupled with first-principles modeling, provide a new understanding of the dynamic structural processes that underlie the functionality of two-dimensional materials and open up new opportunities for ultrafast strain engineering using all-optical methods.

Ultrafast electronic and structural response of monolayer MoS2 under intense photoexcitation conditions.

We report on the dynamical response of single layer transition metal dichalcogenide MoS2 to intense above-bandgap photoexcitation using the nonlinear-optical second order susceptibility as a direct probe of the electronic and structural dynamics. Excitation conditions corresponding to the order of one electron-hole pair per unit cell generate unexpected increases in the second harmonic from monolayer films, occurring on few picosecond time-scales. These large amplitude changes recover on tens of picosecond time-scales and are reversible at megahertz repetition rates with no photoinduced change in lattice symmetry observed despite the extreme excitation conditions.

Strain engineering in monolayer materials using patterned adatom adsorption.

We utilize reactive empirical bond order (REBO)-based interatomic potentials to explore the potential for the engineering of strain in monolayer materials using lithographically or otherwise patterned adatom adsorption. In the context of graphene, we discover that the monolayer strain results from a competition between the in-plane elasticity and out-of-plane relaxation deformations. For hydrogen adatoms on graphene, the strain outside the adsorption region vanishes due to out-of-plane relaxation deformations. Under some circumstances, an annular adsorption pattern generates homogeneous tensile strains of approximately 2% in graphene inside the adsorption region, approximately 30% of the strain in the adsorbed region. We find that an elliptical adsorption pattern produces strains of as large as 5%, close to the strain in the adsorbed region. Also, nonzero maximum shear strain (∼ 4%) can be introduced by the elliptical adsorption pattern. We find that an elastic plane stress model provides qualitative guidance for strain magnitudes and conditions under which strain-diminishing buckling can be avoided. We identify geometric conditions under which this effect has potential to be scaled to larger areas. Our results elucidate a method for strain engineering at the nanoscale in monolayer devices.

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers.

Mo- and W-dichalcogenide compounds have a two-dimensional monolayer form that differs from graphene in an important respect: it can potentially have more than one crystal structure. Some of these monolayers exhibit tantalizing hints of a poorly understood structural metal-to-insulator transition with the possibility of long metastable lifetimes. If controllable, such a transition could bring an exciting new application space to monolayer materials beyond graphene. Here we discover that mechanical deformations provide a route to switching thermodynamic stability between a semiconducting and a metallic crystal structure in these monolayer materials. Based on state-of-the-art density functional and hybrid Hartree-Fock/density functional calculations including vibrational energy corrections, we discover that MoTe2 is an excellent candidate phase change material. We identify a range from 0.3 to 3% for the tensile strains required to transform MoTe2 under uniaxial conditions at room temperature. The potential for mechanical phase transitions is predicted for all six studied compounds.

Flexural electromechanical coupling: a nanoscale emergent property of boron nitride bilayers.

The symmetry properties of atomically thin boron nitride (BN) monolayers endow them with piezoelectric properties, whereas the bulk parent crystal of stacked BN layers is not piezoelectric. This suggests potential for unusual electromechanical properties in the few layer regime. In this work, we explore this regime and discover that a bilayer consisting of two BN monolayers exhibits a strong mechanical coupling between curvature and electric fields. Using a mechanical model with parameters obtained from density functional theory, we find that these bilayers amplify in-plane piezoelectric displacements by exceedingly large factors on the order of 10(3)-10(4). We find that this type of electromechanical coupling is an emergent nanoscale property that occurs only for the case of two stacked BN monolayers.