1.
Rev Sci Instrum
; 85(2): 02A501, 2014 Feb.
Artigo
em Inglês
| MEDLINE
| ID: mdl-24593424
RESUMO
Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.