Lasing in silicon-organic hybrid waveguides.

Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Athermal arrayed waveguide gratings in silicon-on-insulator by overlaying a polymer cladding on narrowed arrayed waveguides.

Athermal arrayed waveguide gratings (AWGs) in silicon-on-insulator (SOI) are experimentally demonstrated for the first time to our knowledge. By using narrowed arrayed waveguides, and then overlaying a polymer layer, the wavelength temperature dependence of the AWGs is successfully reduced to -1.5 pm/°C, which is more than 1 order of magnitude less than that of normal SOI AWGs. The athermal behavior of the AWGs is obtained with little degradation of their performance. For the central channel, the cross talk is less than -15 dB and the insertion loss is around 2.6 dB. Good characteristics can be maintained with temperatures up to 75 °C. The total size of the device is 350 µm × 250 µm.

Optical properties of highly nonlinear silicon-organic hybrid (SOH) waveguide geometries.

Geometry, nonlinearity, dispersion and two-photon absorption figure of merit of three basic silicon-organic hybrid waveguide designs are compared. Four-wave mixing and heterodyne pump-probe measurements show that all designs achieve high nonlinearities. The fundamental limitation of two-photon absorption in silicon is overcome using silicon-organic hybrid integration, with a five-fold improvement for the figure of merit (FOM). The value of FOM = 2.19 measured for silicon-compatible nonlinear slot waveguides is the highest value published.

Optical near-field study of photonic crystal tapers.

A scanning near-field optical microscopy study is undertaken on photonic crystal tapers. These tapers are used to couple a 3 microm wide multimode dielectric waveguide to a single-line defect monomode photonic crystal waveguide. Two kinds of taper, with or without a localized defect, are compared. Higher transmission efficiency is obtained when a defect is utilized. The near-field study at 1550 nm shows experimentally that this defect prevents leaky resonant states to appear in the taper and thus permits a decrease in out-of-plane losses. These observations are supported by band diagram calculations.

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides.

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding.

Experimental observation of slow mode dispersion in photonic crystal coupled-cavity waveguides.

We experimentally investigate the dispersion curve of an integrated silicon-on-insulator coupled-cavity waveguide in a photonic crystal environment using a technique based on far-field imaging. We show that a chain of eight coupled cavities of a moderate Q factor can form a continuous dispersion band characterized by extremely flat dispersion and a group index of 105+/-20 within a 2.6 nm wavelength range. The experimental results are well reproduced by theoretical calculations based on the guided-mode expansion method.

Boxlike filter response based on complementary photonic bandgaps in two-dimensional microresonator arrays.

We propose that a boxlike filter response can be obtained by utilizing complementary photonic bandgap properties of the column and row configurations in two-dimensional microresonator arrays. The filters are fabricated using deep-UV lithography in silicon-on-insulator technology. The observed sidelobes reduction is approximately 10 dB, and the usable bandwidth can be as high as 500-750 GHz.

Demonstration of defect modes in coupled microresonator arrays fabricated in silicon-on-insulator technology.

We show experimentally the existence of defect modes in mutually coupled microring resonator arrays fabricated in silicon-on-insulator technology. The movements of donor-like and acceptor-like modes are demonstrated for various defect lengths, in good agreement with earlier theoretical prediction.

Low-loss, low-cross-talk crossings for silicon-on-insulator nanophotonic waveguides.

We present compact crossings for silicon-on-insulator photonic wires. The waveguides are broadened using a 3 microm parabolic taper in each arm. By locally applying a lower index contrast using a double-etch technique, loss of confinement is reduced and 97.5% transmission (-1.7 dB) is achieved with only -40 dB cross talk.

A polarization-diversity wavelength duplexer circuit in silicon-on-insulator photonic wires.

We present a wavelength duplexer based on a compact arrayed waveguide grating (AWG) in silicon-on-insulator photonic wire waveguides. Polarization insensitive operation is achieved through a special polarization diversity approach in which we use 2-D grating fiber couplers as integrated polarization splitters. To mitigate the effects of process variations, we propagated both polarizations in opposite directions through the same AWG with a mere 600x350microm(2) footprint. This resulted in an on-chip insertion loss between -2.1dB and -6.9dB, crosstalk of -15dB, and only 0.66dB polarization dependent loss. This is the first demonstration of a functional polarization-diversity circuit implemented in SOI nanophotonic waveguides, including interfaces to single-mode fiber.

Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits.

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.