Large and tunable optoelectronic chromatic dispersion in PIN-type photodiodes.

It is known that PN-type photodiodes possess high optoelectronic chromatic dispersion (OED). Here we present a theoretical and experimental study of OED in PIN-type photodiodes. Applying the modulation phase-shift technique, a Ge PIN photodiode exhibits ∼0.5 deg/nm phase-shift sensitivity at 10 MHz modulation, corresponding to a dispersion of 1.4 ×109ps/(n m ×k m), many orders of magnitude larger than high-dispersion optical materials such as chalcogenide glass. A striking feature of the PIN device is the ability to tune the amount and sign of the OED through the bias voltage. Electronic tuning between -0.8 deg/nm and +0.5 deg/nm is shown. The PIN photodiode is an on-chip device possessing significant tunable dispersion for applications in optical sensing and spectroscopy.

Optoelectronic chromatic dispersion and wavelength monitoring in a photodiode.

The optoelectronic process of light absorption and current formation in photodiodes is shown to be a significant source of optoelectronic chromatic dispersion (OED). Simple design rules are developed for fabricating a photodiode-based dispersion device that possesses large, small, zero, and either positive or negative OED. The OED parameter is proportional to a spectrally-dependent absorption term α-1dα/dλ . Silicon-based devices are predicted to display significant OED throughout the near IR, while Ge and InGaAs have high OED in the C- and L-bands and 1650 nm region, respectively. The OED of a commercial Ge PN photodiode is measured to be 3460 ps/nm at 1560 nm wavelength with 500 kHz modulation, demonstrating 8 pm spectral resolution with the phase-shift technique. Temperature-tuning of the OED in the Ge photodiode is also demonstrated. The ubiquitous photodiode is a tunable OED device, with applications in high-resolution optical spectroscopy and optical sensing.