RESUMO
Quantum efficiency (QE) was modeled for an n-type doping InSb1-xBix quantum-dot (QD) photodetector with a p-type doping AlGaAs bulk region. First, the relations of the electron and hole contributions to the current were stated. The absorption coefficient was calculated for the structure, and two windows were predicted in the quantum efficiency spectrum, which is important in the detection applications. High quantum efficiency was obtained due to the Bi inclusion in the structure of the photodetector.
RESUMO
An InSb(1-x)Bi(x) quantum dot (QD) photodetector was studied in this work. First, the quantum efficiency (QE) was modeled for this structure where the relations of electron and hole densities and their contribution to current density are derived. The absorption of p-, n- and depletion regions were calculated before specifying their contribution to QE. It is shown that adding Bi to Sb-based QD structures increases their absorption and QE. High Bi content extended the cutoff detection wavelength of these detectors.
