Skyrmion Echo in a System of Interacting Skyrmions.

We consider helical rotation of skyrmions confined in the potentials formed by nanodisks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Because of the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to dephasing of the initial signal. The interaction between skyrmions also can contribute to the dephasing process. However, switching the magnetization direction in the nanodiscs (e.g., by spin transfer torque) also switches the helical rotation of the skyrmions from clockwise to anticlockwise (or vice versa), and this restores the initial signal (which is the essence of skyrmion echo).

Spin-Momentum-Locking Inhomogeneities as a Source of Bilinear Magnetoresistance in Topological Insulators.

A new mechanism of bilinear magnetoresistance (BMR) is proposed and studied theoretically within the minimal model describing surface electronic states in topological insulators. The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both magnetic field and current (electric field). The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to inhomogeneities of spin-momentum locking, that unavoidably appear as a result of structural defects in topological insulators. The proposed mechanism leads to the BMR even if the electronic band structure is isotropic (e.g., absence of hexagonal warping), and is shown to be dominant at lower Fermi energies.

Intrinsic contribution to spin Hall and spin Nernst effects in a bilayer graphene.

We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective low-energy k ⋅p and reduced Hamiltonians, which are appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also considered. The results reveal a transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.