RESUMO
Small-scale soft robots demonstrate intricate life-like behavior and allow navigation through arduous terrains and confined spaces. However, the primary challenges in soft robotics are 1) creating actuators capable of quick, reversible 22D-to-3D shape morphing with adjustable stiffness, 2) improving actuation force and robustness for wider applications, and 3) designing holistic systems for untethered manipulation and flexible multimodality in practical scenarios. Here, mechanically compliant paper-like robots are presented with multiple functionalities. The robots are based on photothermally activated polymer bimorph actuators that incorporate graphene for the photo-thermal conversion of energy and muscovite mica, with its high Young's modulus, providing the required stiffness. Conversion of light into heat leads to thermal expansion and bending of the stress-mismatched structures. The actuators are designed on the basis of a modified Timoshenko model, and numerical simulations are employed to evaluate their actuation performance. The membranes can be utilized for light-driven programmable shape-morphing. Localized control allows the implementation of active hinges at arbitrary positions within the membrane. Integrated into small-scale soft robots in mass production, the membrane facilitates locomotion, rolling, and flipping of the robots. Further, grasping and kicking mechanisms are demonstrated, highlighting the potential of such actuators for future applications.
RESUMO
Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10s-100s of kHz for wavelength λ >500 nm. Here, we demonstrate GS Schottky junction photodetectors fabricated on a silicon-on-insulator substrate (SOI) with response speeds approaching 1 GHz, attributed to the reduction of the photo-active silicon layer thickness to 10 µm and with it a suppression of speed-limiting diffusion currents. Graphene-silicon-on-insulator photodetectors (GSOI-PDs) exhibit a negligible influence of wavelength on response speed and only a modest compromise in responsivities compared to GS junctions fabricated on bulk silicon. Noise-equivalent-power (NEP) and specific detectivity (D*) of GSOI photodetectors are 14.5 pW and 7.83 × 1010 cm Hz1/2 W-1, respectively, in ambient conditions. We further demonstrate that combining GSOI-PDs with micro-optical elements formed by modifying the surface topography enables engineering of the spectral and angular response.
RESUMO
Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 106 V W-1 and short rise- and fall-times of tens of nanoseconds.
RESUMO
We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide and a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon cooling, the carbon segregates to the nickel surface forming a graphene layer over the entire nickel surface. By wet etching of the nickel layer, the graphene layer was allowed to settle on the original substrate. Scanning tunneling microscopy (STM) as well as Raman spectroscopy has been performed for characterization of the layers. Further insight into the morphology of the layers has been gained by Raman mapping indicating micrometer-size graphene grains. Devices for electrical measurement have been manufactured exhibiting a modulation of the transfer current by backgate electric fields. The presented approach allows for mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.
