Phase-Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films.

Different phases of Ga2O3 have been regarded as superior platforms for making new-generation high-performance electronic devices. However, understanding of thermal transport in different phases of nanoscale Ga2O3 thin-films remains challenging, owing to the lack of phonon transport models and systematic experimental investigations. Here, thermal conductivity (TC) and thermal boundary conductance (TBC) of the ( 1 ¯ 010 ) $( {\bar 1010} )$ α-, ( 2 ¯ 01 ) $( {\bar 201} )\;$ ß-, and (001) κ-Ga2O3 thin films on sapphire are investigated. At ≈80 nm, the measured TC of α (8.8 W m-1 K-1) is ≈1.8 times and ≈3.0 times larger than that of ß and κ, respectively, consistent with model based on density functional theory (DFT), whereas the model reveals a similar TC for the bulk α- and ß-Ga2O3. The observed phase- and size-dependence of TC is discussed thoroughly with phonon transport properties such as phonon mean free path and group velocity. The measured TBC at Ga2O3/sapphire interface is analyzed with diffuse mismatch model using DFT-derived full phonon dispersion relation. Phonon spectral distribution of density of states, transmission coefficients, and group velocity are studied to understand the phase-dependence of TBC. This study provides insight into the fundamental phonon transport mechanism in Ga2O3 thin films and paves the way for improved thermal management of high-power Ga2O3-based devices.

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD.

We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roughness of ~1 nm were grown using gallium-tetramethylheptanedionate (Ga(thd)3) and tetraethyl orthosilicate (TEOS) as Ga and Si precursor, respectively, on c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε and κ-phase Ga2O3 using X-ray diffraction (XRD) φ-scan analysis or electron diffraction analysis using conventional TEM was investigated. It is shown that the hexagonal ε-phase can be unambiguously identified by XRD or TEM only in the case that the orthorhombic κ-phase is completely suppressed. Additionally, thermal stability of prepared ε/κ-Ga2O3 films was studied by in situ and ex situ XRD analysis and atomic force microscopy. The films were found to preserve their crystal structure at temperatures as high as 1100 °C for 5 min or annealing at 900 °C for 10 min in vacuum ambient (<1 mBar). Prolonged annealing at these temperatures led to partial transformation to ß-phase Ga2O3 and possible amorphization of the films.