Characterization of Pb24Te76 quantum dot thin film synthesized by inert gas condensation.

Air-stable and thermal-stable lead telluride quantum dot was successfully prepared on glass substrate by inert gas condensation (IGC) method. Argon (Ar) is the inert gas used during deposition process with a constant flow rate of 3 × 10(-3)Torr. The effect of heat-treatment process at different times was studies for structure, optical and electrical properties for nanocrystalline thin films. The structures of the as deposited and heat-treated films were investigated using grazing incident in-plane X-ray diffraction (GIIXD). The GIIXD pattern showed nanostructure face centered cubic structure of PbTe thin films. The energy dispersive X-ray analysis (EDX) of as deposited PbTe thin film was carried out and showed that the atomic ratio of Pb/Te was 24/76. The particle size of the as deposited PbTe film and after stored it in an unhumid atmosphere are 6.8 ± 0.3 nm and 7.2 ± 0.3 nm respectively as estimated form TEM image (i.e. in the same level of particle size). However, the particle size was changed to be 11.8 ± 0.3 nm after heat-treated for 5h at 473K. These particle size values of PbTe thin film are smaller than its Bohr radius. The estimated value of optical band gap Eg decreased from 1.71 eV for the as deposited film to 1.62 eV for film heat-treated (5 h at 473K). The dc electrical conductivity is increased with raising temperature in the range (303-473K) for all thin films under investigation. The deduced activation energy decreased from 0.222 eV for as deposited sample to 0.125 eV after heat-treated at 473K for 5 h.

Phase transformation and disorder effect on optical and electrical properties of Zn3P2 thin films.

The phase transformation of zinc phosphide (Zn(3)P(2)) thin films was detected through isochronal annealing process. The effects on isochronal annealing on the internal structural, optical and electrical properties of deposited Zn(3)P(2) thin films have been discussed. The films were prepared by thermal evaporation under constant preparation conditions of vacuum 1.3×10(-5)Torr, substrate temperature (300K), rate of deposition (∼1nm/s) and film thickness (480nm). The annealing process was carried out under vacuum for 2h at different temperatures ranging from 373 to 623K. X-ray diffraction patterns showed that the as-deposited films and those annealed at temperatures less than 623K exhibit amorphous structure, while the films annealed at 623K showed tetragonal polycrystalline structure. The optical transmission and reflection spectra were measured at the wavelength range of 190-2500nm. The absorption coefficient spectra and the degree of disorder as measured from the absorption edge were determined. The indirect and direct optical energy band gaps were evaluated for indirect allowed and direct allowed transitions for amorphous and polycrystalline films, respectively. The refractive index n(o) increases with raising the annealing temperature which refers to more condensation in the material. The electrical resistivity for Zn(3)P(2) films decreases exponentially with raising the annealing temperature up to 623K as influenced by structure transformation and decreasing the degree of disorder in the films.