1.
Sci Rep
; 4: 5333, 2014 Jun 18.
Artigo
em Inglês
| MEDLINE
| ID: mdl-24939247
RESUMO
This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm × 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10× reduction in area and >10(6) times reduction in the power consumption per learning cycle.